GWM160-0055X1-SL IXYS, GWM160-0055X1-SL Datasheet - Page 4

• Manufacturer Part Number: GWM160-0055X1-SL
• Description: IC FULL BRIDGE 3PH ISOPLUS STRT
• Manufacturer: IXYS

Specifications of GWM160-0055X1-SL

• Fet Type: 6 N-Channel (3-Phase Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 150A
• Vgs(th) (max) @ Id: 4.5V @ 1mA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Mounting Type: Surface Mount
• Package / Case: Through Hole
• Vdss, Max, (v): 55
• Id25, Tc = 25°c, (a): 150
• Id80, Tc = 80°c, (a): -
• Id90, Tc = 90°c, (a): 115
• Rds(on), Max, Tj = 25°c, (mohms): 3.3
• Tf, Typ, (ns): 120
• Tr, Typ, (ns): 125
• Rthjc, Max, (ºc/w): 1.0
• Package Style: ISOPLUS-DIL™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
350
300
250
200
150
100
1.2
1.1
1.0
0.9
0.8
0.7
2.5
2.0
1.5
1.0
0.5
0.0
50
0
-25
-25
0
Fig. 1 Drain source breakdown voltage V
Fig. 3 Typical output characteristic
Fig. 5 Drain source on-state resistance R
V
20 V
15 V
V
I
GS
D
GS
I
DSS
= 160 A
=
= 10 V
0
0
= 0.25 mA
1
R
vs. junction temperature T
versus junction temperature T
DS(on)
10 V
25
25
2
50
50
T
T
V
J
J
DS
7 V
3
[°C]
[°C]
R
[V]
75
75
DS(on)
normalized
4
100
100
J
T
J
= 25°C
125
125
5
J
6.5 V
5.5 V
DSS
6 V
5 V
DS(on)
150
150
6
7.5
6.0
4.5
3.0
1.5
0.0
350
300
250
200
150
100
350
300
250
200
150
100
3.0
2.5
2.0
1.5
1.0
0.5
50
50
0
0
3
0
0
Fig. 2 Typical transfer characteristic
Fig. 4 Typical output characteristic
Fig. 6 Drain source on-state
V
20 V
15 V
GS
V
T
DS
=
J
50
= 125°C
= 24 V
1
resistance R
4
5 V
100
GWM 160-0055X1
2
5.5 V
T
10 V
J
5
150
= 25°C
V
V
DS(on)
I
GS
D
DS
6 V
3
[A]
[V]
[V]
200
versus I
6
6.5 V
4
250
D
T J = 125°C
T
7 V
7
J
5
300
= 125°C
7 V
6.5 V
6 V
5.5 V
5 V
V
20110307i
20 V
GS
15 V
10 V
4 - 6
=
350
8
6