GWM120-0075X1-SMD SAM IXYS, GWM120-0075X1-SMD SAM Datasheet - Page 6

• Manufacturer Part Number: GWM120-0075X1-SMD SAM
• Description: IC FULL BRIDGE 3PH ISOPLUS SMD
• Manufacturer: IXYS

Specifications of GWM120-0075X1-SMD SAM

• Fet Type: 6 N-Channel (3-Phase Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.9 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 115nC @ 10V
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
1.6
1.4
1.2
1.0
0.8
0.6
0.4
70
65
60
55
50
V
V
I
D
GS
DS
Fig. 13 Reverse recovery time t
Fig. 15 Reverse recovery charge Q
Fig. 17
V
T
V
T
400
400
VJ
VJ
0.1 V
0.1 I
R
R
t
d(on)
= 125°C
= 125°C
= 30 V
= 30 V
D
0.9 I
GS
of the body diode vs. di/dt
of the body diode vs. di/dt
t
r
Definition of switching times
600
600
D
-di
-di
F
800
800
F
/dt [A/µs]
/dt [A/µs]
1000
1000
40 A
40 A
rr
80A
1200
1200
80A
0.9 V
rr
125 A
125 A
t
d(off)
GS
1400
1400
0.9 I
t
f
0.1 I
D
D
t
t
250
200
150
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
45
40
35
30
25
20
15
10
50
0
200
0.0
1
Fig. 14 Reverse recovery current I
Fig. 16 Source current I
Fig. 18 Typ. therm. impedance junction
V
T
VJ
R
= 125°C
= 30 V
400
0.2
to heatsink Z
source drain voltage V
of the body diode vs. di/dt
10
T
J
GWM 120-0075X1
= -25°C
600
0.4
125°C
150°C
25°C
-di
Time [ms]
V
F
/dt [A/µs]
SD
800
100
0.6
thJC
[V]
S
vs.
1000
0.8
SD
40 A
1000
(body diode)
1200
GWM 120-0075X1
RM
1.0
80 A
125 A
20110407d
10000
1400
1.2
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