IRF7907PBF International Rectifier, IRF7907PBF Datasheet

IRF7907PBF

Manufacturer Part Number

IRF7907PBF

Description

MOSFET N-CHAN DUAL 30V 8-SOIC

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF7907PBF.pdf (10 pages)

2.IRF7907PBF.pdf (4 pages)

Specifications of IRF7907PBF

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

16.4 mOhm @ 9.1A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

9.1A, 11A

Vgs(th) (max) @ Id

2.35V @ 25µA

Gate Charge (qg) @ Vgs

10nC @ 4.5V

Input Capacitance (ciss) @ Vds

850pF @ 15V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Channel Type

Dual N

Current, Drain

9.1/11 Q1/Q2 A

Gate Charge, Total

6.7 nC (Control FET), 14 nC (Synchronous FET)

Package Type

SO-8

Polarization

N-Channel

Power Dissipation

2/2 Q1/Q2 W

Resistance, Drain To Source On

0.0164/0.0118 Q1/Q2 Ohm

Resistance, Thermal, Junction To Case

90/62.5 Q1/Q2 DegC/W

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

8 ns (Control FET), 13 ns (Synchronous FET)

Time, Turn-on Delay

6 ns (Control FET), 8 ns (Synchronous FET)

Transconductance, Forward

19 S (Control FET), 24 S (Synchronous FET)

Voltage, Breakdown, Drain To Source

30 V

Voltage, Forward, Diode

1 V

Voltage, Gate To Source

±20 V

Configuration

Dual

Transistor Polarity

Dual N-Channel

Resistance Drain-source Rds (on)

20.5 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

9.1 A

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Fall Time

3.4 ns, 5.3 ns

Gate Charge Qg

6.7 nC

Minimum Operating Temperature

- 55 C

Rise Time

9.3 ns, 14 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7907PBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 10
Download datasheet (321Kb)

Benefits

Applications

www.irf.com

Absolute Maximum Ratings

Thermal Resistance

STG

θJL

θJA

and Current

@ T

Dual SO-8 MOSFET for POL

Converters in Notebook Computers, Servers,

Graphics Cards, Game Consoles

and Set-Top Box

Very Low R

Low Gate Charge

Fully Characterized Avalanche Voltage

20V V

Improved Body Diode Reverse Recovery

100% Tested for R

Lead-Free

= 25°C

= 70°C

= 25°C

= 70°C

Max. Gate Rating

DS(on)

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Junction-to-Drain Lead

Junction-to-Ambient

at 4.5V V

Parameter

@ 10V

30V

DSS

Q1 16.4m @V

Q2 11.8m @V

Q1 Max.

0.016

62.5

9.1

7.3

2.0

1.3

IRF7907PbF

DS(on)

-55 to + 150

HEXFET

± 20

max

Q2 Max.

0.016

62.5

8.8

2.0

1.3

= 10V

Power MOSFET

SO-8

9.1A

Units

W/°C

°C/W

11A

07/09/08

°C

Related parts for IRF7907PBF

IRF7907PBF Summary of contents

Page 1

... Storage Temperature Range STG Thermal Resistance Junction-to-Drain Lead R θJL R Junction-to-Ambient θJA www.irf.com V DSS 30V Q1 16. 11.8m @V Parameter Q1 Max. @ 10V GS @ 10V GS 0.016 Q1 Max. Parameter g fg IRF7907PbF ® HEXFET Power MOSFET R max DS(on) = 10V 9. 10V 11A GS SO-8 Q2 Max. Units 30 ± 20 9.1 11 7.3 8 2.0 2 ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Q1 - Control FET 100 10 1 0.1 2.3V ≤ 60µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 10 ≤ 60µs PULSE WIDTH 2. 150°C ...

Page 4

Q1 - Control FET 10000 0V MHZ C iss = SHORTED C rss = oss = 1000 Ciss ...

Page 5

Q1 - Control FET 1 9. 10V 1.0 0.5 -60 -40 - Junction Temperature (°C) Fig 13. Normalized On-Resistance vs. Temperature 100 150°C 10.0 ...

Page 6

Q1 - Control FET 100 Ambient Temperature (°C) Fig 19. Maximum Drain Current vs. Ambient Temp. 2.2 2.0 1.8 1.6 1.4 1.2 1.0 -75 -50 - ...

Page 7

D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 ...

Page 8

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 28 D.U 20V V GS 0.01 Ω Fig 29a. Unclamped Inductive Test Circuit L ...

Page 9

SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dÃ IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã ...

Page 10

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : ...

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