IRF7324PBF International Rectifier, IRF7324PBF Datasheet

MOSFET 2P-CH 20V 9A 8-SOIC

IRF7324PBF

Manufacturer Part Number
IRF7324PBF
Description
MOSFET 2P-CH 20V 9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet

Specifications of IRF7324PBF

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 5V
Input Capacitance (ciss) @ Vds
2940pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
2
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.018Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Continuous Drain Current
9A
Power Dissipation
2W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF7324PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7324PBF
Manufacturer:
IR
Quantity:
20 000
Description
Absolute Maximum Ratings
Thermal Resistance
New trench HEXFET
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in battery and load management
applications.
www.irf.com
V
I
I
I
P
P
V
T
R
D
D
DM
Trench Technology
Ultra Low On-Resistance
Available in Tape & Reel
2.5V Rated
Low Profile (<1.1mm)
Lead-Free
J
DS
D
D
GS
θJA
Dual P-Channel MOSFET
@ T
@ T
, T
@T
@T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient
Linear Derating Factor
®
Gate-to-Source Voltage
Power MOSFETs from International
Parameter

GS
GS
ƒ
ƒ
ƒ
@ -4.5V
@ -4.5V
Max.
G2
G1
S2
S1
1
2
3
4
Top View
HEXFET
8
7
6
5
IRF7324PbF
-55 to + 150
62.5
D1
D1
D2
D2
Max.
-9.0
-7.1
Units
-20
-71
2.0
1.3
± 12
SO-8
16
®
R
Power MOSFET
DS(on)
V
DSS
= 0.018Ω
= -20V
mW/°C
Units
°C/W
°C
W
W
V
A
V
1

Related parts for IRF7324PBF

IRF7324PBF Summary of contents

Page 1

... T Junction and Storage Temperature Range J STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com HEXFET Top View @ -4. -4.5V GS  ƒ ƒ Max. ƒ IRF7324PbF ® Power MOSFET -20V DSS 0.018Ω DS(on) SO-8 Max. Units -20 V -9.0 -7.1 A -71 2.0 W 1.3 ...

Page 2

... IRF7324PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = -15V 0.0 3.0 3.5 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7324PbF VGS -4.5V -3.5V -2.5V -2.0V -1.5V -1.3V -1.0V -0.75V -0.75V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage (V) DS -9.0A ...

Page 4

... IRF7324PbF 5000 1MHz iss rss 4000 oss iss 3000 2000 1000 C oss C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 T = 150 C ° ° 0.1 0.2 0.4 0.6 0.8 1.0 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

... RESPONSE) 0.1 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V GS 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF7324PbF - + ≤ 1 ≤ 0 d(on) r d(off ...

Page 6

... IRF7324PbF 0.025 0.020 -9.0A 0.015 0.010 2.0 2.5 3.0 3.5 V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 0.10 0.08 0.06 0. -2.5V 0.02 0.00 4.0 4 Fig 13. Typical On-Resistance Vs. Current Regulator Same Type as D.U.T. ...

Page 7

... 6.46 [.255] 3X 1.27 [.050] DAT E CODE (YWW DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL LAST DIGIT YEAR WW = WEEK XXXX SEMBLY CODE F 7101 LOT CODE PART NUMBER IRF7324PbF INCHES MILLIMET ERS MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 ...

Page 8

... IRF7324PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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