IRF7324TRPBF International Rectifier, IRF7324TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7324TRPBF
• Description: MOSFET 2P-CH 20V 9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7324TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 5V
• Input Capacitance (ciss) @ Vds: 2940pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: P
• Current, Drain: –9 A
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 2 W
• Resistance, Drain To Source On: 0.018 Ohm
• Resistance, Thermal, Junction To Case: 62.5 °C/W
• Temperature, Operating, Minimum: -55 °C
• Voltage, Drain To Source: –20 V
• Voltage, Gate To Source: ±12 V
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 9 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7324PBFTR; IRF7324TRPBF; IRF7324TRPBFTR

IRF7324PbF
6
0.025
0.020
0.015
0.010
Fig 12. Typical On-Resistance Vs.
GS
Fig 14a. Basic Gate Charge Waveform
V
2.0
G
Q
V GS, Gate -to -Source Voltage (V)
GS
2.5
Gate Voltage
3.0
Charge
Q
Q
GD
G
I D = -9.0A
3.5
4.0
4.5
0.10
0.08
0.06
0.04
0.02
0.00
Fig 13. Typical On-Resistance Vs.
Fig 14b. Gate Charge Test Circuit
0
12V
V
GS
V GS = -2.5V
Same Type as D.U.T.
10
Current Regulator
.2µF
Drain Current
-I D , Drain Current (A)
50KΩ
-3mA
20
Current Sampling Resistors
.3µF
I
G
30
D.U.T.
www.irf.com
40
V GS = -4.5V
I
D
+
-
50
V
DS
60