IRF7910TRPBF International Rectifier, IRF7910TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7910TRPBF
• Description: MOSFET DUAL N-CH 12V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7910TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Vgs(th) (max) @ Id: 2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 10A
• Drain To Source Voltage (vdss): 12V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 8A, 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7910PbF
I
AS
12V
Fig 15a&b. Unclamped Inductive Test circuit
6
V
Fig 14a&b. Basic Gate Charge Test Circuit
GS
0.0145
0.0140
0.0135
0.0130
0.0125
0.0120
Same Type as D.U.T.
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
.2µF
50KΩ
3mA
t p
Current Sampling Resistors
.3µF
0
I
G
V
(BR)DSS
D.U.T.
I
V GS = 4.5V
D
and Waveforms
20
and Waveform
+
-
V
I D , Drain Current (A)
DS
V
40
R G
GS
20V
V DS
t p
V
G
Q
I AS
GS
D.U.T
60
0.01 Ω
L
Charge
Q
Q
GD
G
80
15V
DRIVER
+
-
100
V DD
A
0.020
0.018
0.015
0.013
0.010
Fig 13. On-Resistance Vs. Gate Voltage
250
200
150
100
50
0
25
Fig 15c. Maximum Avalanche Energy
2.5
Starting T , Junction Temperature
V GS, Gate -to -Source Voltage (V)
50
Vs. Drain Current
J
3.5
75
I D = 8.0A
100
TOP
BOTTOM
4.5
www.irf.com
125
( C)
°
I D
3.6A
6.4A
8.0A
150
5.5