IRF7752TRPBF International Rectifier, IRF7752TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7752TRPBF
• Description: MOSFET N-CH DUAL 30V 4.6A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7752TRPBF

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 1W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Vgs(th) (max) @ Id: 2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 36 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 4.6 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7752
4
1400
1200
1000
100
800
600
400
200
0.1
10
Fig 5. Typical Capacitance Vs.
1
0
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
V
0.4
V
SD
DS
Forward Voltage
T = 150 C
V
C
C
C
J
,Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
C oss
C rss
C iss
0.6
=
=
=
=
0V,
C
C
C
°
gs
gd
ds
0.8
+ C
+ C
10
f = 1MHz
gd ,
gd
T = 25 C
J
1.0
C
ds
°
V
SHORTED
GS
1.2
= 0 V
1.4
100
1000
100
10
0.1
Fig 8. Maximum Safe Operating Area
10
8
6
4
2
0
1
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
D
Single Pulse
T
T
C
J
= 25 C °
= 150 C
4.6A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
V
DS
Q , Total Gate Charge (nC)
4
G
°
, Drain-to-Source Voltage (V)
1
8
BY R
V
V
DS
DS
DS(on)
= 24V
= 15V
12
10
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16
10us
100us
1ms
10ms
100
20