IRF7319PBF International Rectifier, IRF7319PBF Datasheet - Page 6

• Manufacturer Part Number: IRF7319PBF
• Description: MOSFET N+P 30V 4.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7319PBF

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A, 4.9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 46 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 6.5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 17 ns, 32 ns
• Gate Charge Qg: 22 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 8.9 ns, 13 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
100
10
10
1
1
0.1
3.0
TOP
BOTTOM - 3.0V
-V
-V
3.5
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
- 15V
VGS
DS
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25°C
J
4.0
4.5
1
T = 150°C
J
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
J
DS
= -10V
5.0
-3.0V
5.5
10
6.0
A
A
100
100
10
10
1
1
0.4
0.1
TOP
BOTTOM - 3.0V
-V
-V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
- 15V
0.6
SD
VGS
DS
T = 150°C
J
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.8
1
T = 25°C
J
20µs PULSE WIDTH
T = 150°C
1.0
J
-3.0V
1.2
V
GS
= 0V
1.4
10
A
A