IRF7389PBF International Rectifier, IRF7389PBF Datasheet - Page 4
![MOSFET N+P 30V 5.3A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7389PBF
Manufacturer Part Number
IRF7389PBF
Description
MOSFET N+P 30V 5.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7389TRPBF.pdf
(10 pages)
Specifications of IRF7389PBF
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
29 mOhm @ 5.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.3A, 5.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
33nC @ 10V
Input Capacitance (ciss) @ Vds
650pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
N amd P
Current, Drain
7.3/-5.3 N/P A
Package Type
SO-8
Power Dissipation
2.5/2.5 N/P W
Resistance, Drain To Source On
0.046/0.098 N/P Ohm
Thermal Resistance, Junction To Ambient
50/50 N/P °C/W
Voltage, Drain To Source
30/-30 N/P V
Voltage, Gate To Source
+-20 V
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
46 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7.3 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
17 ns, 32 ns
Gate Charge Qg
22 nC
Minimum Operating Temperature
- 55 C
Rise Time
8.9 ns, 13 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7389PBF
Manufacturer:
IR
Quantity:
20 000
4
0.12
0.10
0.08
0.06
0.04
0.02
0.00
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
0
I =
D
5.8A
V
GS
T , Junction Temperature ( C)
J
3
, Gate-to-Source Voltage (V)
0
20
6
40 60
I
D
= 5.8A
9
80 100 120 140 160
V
°
GS
12
=
10V
15
A
0.040
0.036
0.032
0.028
0.024
0.020
200
160
120
80
40
0
25
0
Starting T , Junction Temperature (°C)
50
10
J
I , Drain Current (A)
D
V
75
GS
= 4.5V
V
20
GS
100
= 10V
TOP
BOTTOM
www.irf.com
30
125
3.2A
1.8A
4.0A
I
D
150
40
A
A