IRF7380PBF International Rectifier, IRF7380PBF Datasheet - Page 2

• Manufacturer Part Number: IRF7380PBF
• Description: MOSFET 2N-CH 80V 3.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7380PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 73 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF7380PBF

IRF7380PbF
V
∆V
R
V
I
I
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
I
I
V
t
Q
t
Static @ T
Dynamic @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
(BR)DSS
GS(th)
AS
SD
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
2
(BR)DSS
eff.
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C (unless otherwise specified)
J
Parameter
= 25°C (unless otherwise specified)
Ùh
Parameter
Parameter
Parameter
Ù
h
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
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–––
–––
–––
–––
–––
–––
–––
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–––
–––
–––
–––
2.0
4.3
80
0.09
–––
–––
–––
–––
–––
–––
–––
660
110
710
140
–––
–––
–––
110
2.9
4.5
9.0
61
15
10
41
17
15
72
50
-200
Typ.
–––
–––
250
200
–––
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4.0
3.6
1.3
73
20
23
29
V/°C
mΩ
µA
nA
nC
nC
ns
pF
ns
V
V
S
A
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 2.2A
= 2.2A
= 25°C, I
= 25°C, I
= 24Ω
= V
= 80V, V
= 64V, V
= 25V, I
= 40V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 40V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
Max.
, I
2.2
75
f
f
Conditions
D
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 2.2A, V
= 2.2A, V
= 2.2A
= 2.2A
= 0V to 64V
= 1.0V, ƒ = 1.0MHz
= 64V, ƒ = 1.0MHz
f
= 0V
= 0V, T
www.irf.com
D
f
= 1mA
GS
DD
J
G
= 125°C
= 40V
= 0V
Units
g
mJ
A
f
D
S