IRF7380PBF International Rectifier, IRF7380PBF Datasheet - Page 2
![MOSFET 2N-CH 80V 3.6A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7380PBF
Manufacturer Part Number
IRF7380PBF
Description
MOSFET 2N-CH 80V 3.6A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7380PBF.pdf
(8 pages)
Specifications of IRF7380PBF
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
73 mOhm @ 2.2A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
660pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF7380PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7380PBF
Manufacturer:
IR
Quantity:
20 000
IRF7380PbF
V
∆V
R
V
I
I
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
I
I
V
t
Q
t
Static @ T
Dynamic @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
(BR)DSS
GS(th)
AS
SD
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
2
(BR)DSS
eff.
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C (unless otherwise specified)
J
Parameter
= 25°C (unless otherwise specified)
Ãh
Parameter
Parameter
Parameter
Ã
h
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
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–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
4.3
80
0.09
–––
–––
–––
–––
–––
–––
–––
660
110
710
140
–––
–––
–––
110
2.9
4.5
9.0
61
15
10
41
17
15
72
50
-200
Typ.
–––
–––
250
200
–––
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–––
–––
–––
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–––
4.0
3.6
1.3
73
20
23
29
V/°C
mΩ
µA
nA
nC
nC
ns
pF
ns
V
V
S
A
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 2.2A
= 2.2A
= 25°C, I
= 25°C, I
= 24Ω
= V
= 80V, V
= 64V, V
= 25V, I
= 40V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 40V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
Max.
, I
2.2
75
f
f
Conditions
D
Conditions
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
GS
GS
= 250µA
= 2.2A, V
= 2.2A, V
= 2.2A
= 2.2A
= 0V to 64V
= 1.0V, ƒ = 1.0MHz
= 64V, ƒ = 1.0MHz
f
= 0V
= 0V, T
www.irf.com
D
f
= 1mA
GS
DD
J
G
= 125°C
= 40V
= 0V
Units
g
mJ
A
f
D
S