IRF7303PBF International Rectifier, IRF7303PBF Datasheet - Page 6

MOSFET 2N-CH 30V 4.9A 8-SOIC

IRF7303PBF

Manufacturer Part Number
IRF7303PBF
Description
MOSFET 2N-CH 30V 4.9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF7303PBF

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 2.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
520pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.05Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
4.9A
Power Dissipation
2W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Module Configuration
Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
4.9A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
Q
Q
+
GS
GD
V
DS
D.U.T.
-
V
G
V
GS
3mA
Charge
I
I
G
D
Current Sampling Resistors

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