IRF7380TRPBF International Rectifier, IRF7380TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7380TRPBF
• Description: MOSFET N-CH 80V 3.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7380TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Drain To Source Voltage (vdss): 80V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 73 mOhm @ 2.2A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
4.0
3.0
2.0
1.0
0.0
0.1
10
0.00001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
Ambient Temperature
50
T
A
, Ambient Temperature (°C)
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
t , Rectangular Pulse Duration (sec)
1
150
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
0.1
t
d(on)
1. Duty factor D =
2. Peak T
Notes:
t
r
≤ 0.1 %
≤ 1
1
J
IRF7380PbF
= P
DM
x Z
t / t
1
t
thJA
d(off)
P
2
DM
+ T
10
t
f
A
t
1
t
2
+
-
5
100