IRF7902PBF International Rectifier, IRF7902PBF Datasheet - Page 6

• Manufacturer Part Number: IRF7902PBF
• Description: MOSFET N-CHAN DUAL 30V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7902PBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.4A, 9.7A
• Vgs(th) (max) @ Id: 2.25V @ 25µA
• Gate Charge (qg) @ Vgs: 6.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 580pF @ 15V
• Power - Max: 1.4W, 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 18.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 6.4 A
• Power Dissipation: 2.0 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 4.6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 19. Maximum Drain Current vs. Ambient Temperature
Fig 23. Maximum Avalanche Energy vs. Drain Current
6
Fig 21. Threshold Voltage vs. Temperature
2.5
2.0
1.5
1.0
14
12
10
7
6
5
4
3
2
1
0
8
6
4
2
0
-75 -50 -25
25
25
Starting T J , Junction Temperature (°C)
T A , Ambient Temperature (°C)
50
50
T J , Temperature ( °C )
Q1 - Control FET
I D = 250µA
0
75
75
25
50
100
100
TOP
BOTTOM 6.4A
75 100 125 150
125
125
I D
2.4A
2.0A
Typical Characteristics
150
150
Fig 24. Maximum Avalanche Energy vs. Drain Current
Fig 20. Maximum Drain Current vs. Ambient Temperature
Fig 22. Threshold Voltage vs. Temperature
2.5
2.0
1.5
1.0
30
25
20
15
10
10
5
0
8
6
4
2
0
-75 -50 -25
25
25
Starting T J , Junction Temperature (°C)
T A , Ambient Temperature (°C)
50
50
T J , Temperature ( °C )
Q2 - Synchronous FET
I D = 250µA
0
75
75
25
50
100
100
TOP
BOTTOM 7.8A
75 100 125 150
125
125
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I D
2.4A
2.8A
150
150