IRF8313PBF International Rectifier, IRF8313PBF Datasheet

IRF8313PBF

Manufacturer Part Number

IRF8313PBF

Description

MOSFET N-CH DUAL 30V 9.7A 8-SOIC

Manufacturer

International Rectifier

Datasheet

1.IRF8313TRPBF.pdf (10 pages)

Specifications of IRF8313PBF

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

15.5 mOhm @ 9.7A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

9.7A

Vgs(th) (max) @ Id

2.35V @ 25µA

Gate Charge (qg) @ Vgs

90nC @ 4.5V

Input Capacitance (ciss) @ Vds

760pF @ 15V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Configuration

Dual

Transistor Polarity

Dual N-Channel

Resistance Drain-source Rds (on)

21.6 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

9.7 A

Power Dissipation

2 W

Mounting Style

SMD/SMT

Gate Charge Qg

6 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Benefits

Description

www.irf.com

Notes through

Applications

The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the

industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are

critical in synchronous buck

and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC

converters that power the latest generation of processors for notebook and Netcom applications.

Absolute Maximum Ratings

Thermal Resistance

STG

θJL

θJA

and Current

@ T

Load Switch

DC/DC Conversion

Low Gate Charge and Low R

Fully Characterized Avalanche Voltage

20V V

100% Tested for R

Lead-Free (Qualified to 260°C Reflow)

RoHS Compliant (Halogen Free)

= 25°C

= 70°C

= 25°C

= 70°C

Max. Gate Rating

…

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Junction-to-Drain Lead

Junction-to-Ambient

are on page 9

operation

Parameter

DS(on)

including Rds(on) and gate charge to reduce both conduction

@ 10V

30V 15.5m : @V

S 2

S 1

DSS

Typ.

–––

-55 to + 175

HEXFET

IRF8313PbF

DS(on)

Max.

0.016

±20

9.7

8.1

2.0

1.3

max

Max.

62.5

Power MOSFET

= 10V 6.0nC

SO-8

Units

°C/W

W/°C

°C

97145

11/5/08

Related parts for IRF8313PBF

IRF8313PBF Summary of contents

Page 1

... Description The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ΔΒV /ΔT Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV Gate Threshold Voltage Coefficient GS(th) I ...

Page 3

PULSE WIDTH Tj = 25°C 2.3V 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 175° 25°C 0 ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 1000 Ciss Coss Crss 100 10 ...

Page 5

Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ( THERMAL ...

Page 6

Gate-to-Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V D.U 20V GS 0.01 Ω Fig 14a. ...

Page 7

D.U.T + ƒ • • - • + ‚ - R • • • SD • Fig 16. DUT 0 1K 20K S Fig 17a. Gate Charge Test Circuit www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse ...

Page 8

SO-8 Package Outline Dimensions are shown in milimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 9

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

Page 10

... Orderable Part number Package Type IRF8313PbF SO-8 IRF8313TRPbF SO-8 Qualification Information Qualification Level Moisture Sensitivity Level RoHS Compliant Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 10 Standard Pack Form ...

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