IRF8915TRPBF International Rectifier, IRF8915TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF8915TRPBF
• Description: MOSFET 2N-CH 20V 8.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8915TRPBF

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 7.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 540pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 27 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.9 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 4.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF8915PBFTR; IRF8915TRPBF; IRF8915TRPBFTR

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0.01
100
0.1
9
8
7
6
5
4
3
2
1
0
10
1
1E-006
25
Fig 9. Maximum Drain Current vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
T A , Ambient Temperature (°C)
0.20
0.10
0.02
50
Ambient Temperature
0.05
0.01
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
75
100
0.0001
125
t 1 , Rectangular Pulse Duration (sec)
0.001
150
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
0.01
Fig 10. Threshold Voltage vs. Temperature
i/Ri
R
3.0
2.5
2.0
1.5
1.0
1
R
1
-75
τ
2
τ
R
2
2
-50
R
2
0.1
-25
R
τ
3
3
R
τ
T J , Temperature ( °C )
3
3
I D = 250µA
1. Duty factor D =
2. Peak T
Notes:
0
τ
R
4
τ
4
R
4
25
4
1
J
= P
τ
C
τ
DM
Ri (°C/W) τi (sec)
50
3.68799
2.18971
34.7298
21.8971
x Z
t / t
1
thJA
75
P
2
DM
+ T
10
100
A
t
1
0.000349
0.005246
0.470610
13.52000
t
2
125
5
150
100