IRF9952TRPBF International Rectifier, IRF9952TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF9952TRPBF
• Description: MOSFET N+P 30V 2.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9952TRPBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A, 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 150 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF9952PBFTR; IRF9952TRPBF; IRF9952TRPBFTR

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100
0.1
10
0.00001
350
300
250
200
150
100
1
50
0
1
0.50
0.20
0.10
0.05
0.02
0.01
V
DS
V
C
C
C
(THERMAL RESPONSE)
, Drain-to-Source Voltage (V)
0.0001
GS
iss
rss
oss
C
C
C
rss
SINGLE PULSE
iss
oss
= 0V,
= C
= C
= C
gs
gd
ds
+ C
+ C
10
gd
gd
f = 1MHz
0.001
, C
ds
SHORTED
t , Rectangular Pulse Duration (sec)
1
0.01
100
A
20
16
12
8
4
0
0.1
0
I =
D
1.8A
1. Duty factor D = t / t
2. Peak T = P
Q , Total Gate Charge (nC)
Notes:
2
G
1
J
4
DM
x Z
1
thJA
6
P
2
DM
+ T
V
10
DS
A
t
1
= 10V
t
8
2
5
10
100