SP8M9FU6TB Rohm Semiconductor, SP8M9FU6TB Datasheet - Page 4
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SP8M9FU6TB
Manufacturer Part Number
SP8M9FU6TB
Description
MOSFET N/P-CH 30V 9A/5A 8SOIC
Manufacturer
Rohm Semiconductor
Datasheet
1.SP8M9TB.pdf
(6 pages)
Specifications of SP8M9FU6TB
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9A, 5A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
21nC @ 5V
Input Capacitance (ciss) @ Vds
1190pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Transistors
N-ch
Electrical characteristic curves
10000
0.001
1000
0.01
100
0.1
1000
10
10
100
0.01
1
Fig.4 Typical Transfer Characteristics
10
0.0
1
0.1
Fig.1 Typical Capacitance
DRAIN-SOURCE VOLTAGE : V
GATE-SOURCE VOLTAGE : V
0.5
Fig.7 Static Drain-Source
Ta 125 C
Ta 75 C
Ta 25 C
Ta
Ta 125 C
Ta 75 C
Ta 25 C
Ta
vs. Drain-Source Voltage
0.1
1.0
DRAIN CURRENT : I
25 C
25 C
On-State Resistance
vs. Drain Current ( )
1.5
2.0
1
1
2.5
3.0
10
V
Pulsed
D
Ta 25 C
f 1MHz
V
V
Pulsed
DS
GS
(A)
GS
GS
DS
3.5
10V
0V
C
C
C
(V)
10V
(V)
iss
oss
rss
100
4.0
10
10000
1000
1000
100
100
200
150
100
10
10
50
1
0.01
1
0
0.1
Fig.2 Switching Characteristics
0
Fig.5 Static Drain-Source
Ta 125 C
Ta 75 C
Ta 25 C
Ta
t
t
GATE-SOURCE VOLTAGE : V
d (off)
d (on)
Fig.8 Static Drain-Source
t
r
t
2
f
25 C
DRAIN CURRENT : I
DRAIN CURRENT : I
On-State Resistance vs.
Gate-Source Voltage
4
On-State Resistance
vs. Drain Current ( )
0.1
I
I
D
D
9A
4.5A
6
1
8
10
1
D
D
12
Ta 25 C
V
V
R
Pulsed
V
Pulsed
(A)
(A)
Ta 25 C
Pulsed
DD
GS
G
GS
10
GS
15V
10V
14
4.5V
(V)
10
10
16
0.01
1000
0.1
100
10
10
10
1
9
8
7
6
5
4
3
2
1
0
0.0
1
0.1
Fig.3 Dynamic Input Characteristics
0
Ta 25 C
V
I
R
Pulsed
D
Ta 125 C
Ta 75 C
Ta 25 C
Ta
SOURCE-DRAIN VOLTAGE : V
DD
G
Fig.6 Source Current vs.
Fig.9 Static Drain-Source
9A
Ta 125 C
Ta 75 C
Ta 25 C
Ta
TOTAL GATE CHARGE : Qg (nC)
10
15V
5
25 C
DRAIN CURRENT : I
25 C
Source-Drain Voltage
On-State Resistance
vs. Drain Current ( )
0.5
10
15
1
SP8M9
1.0
20
D
(A)
V
Pulsed
V
Pulsed
25
GS
SD
GS
(V)
0V
4V
4/5
1.5
30
10