SP8M5FU6TB Rohm Semiconductor, SP8M5FU6TB Datasheet - Page 5

• Manufacturer Part Number: SP8M5FU6TB
• Description: MOSFET N/P-CH 30V 6A/7A 8SOIC
• Manufacturer: Rohm Semiconductor

Specifications of SP8M5FU6TB

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A, 7A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 10.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A, - 7 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
P-ch
Electrical characteristic curves
10000
0.001
1000
0.01
100
0.1
10
100
0.01
1
10
0.0
Fig.4 Typical Transfer Characteristics
1
0.1
Fig.1 Typical Capacitance
DRAIN-SOURCE VOLTAGE : V
GATE-SOURCE VOLTAGE : V
0.5
Fig.7 Static Drain-Source
Ta 125 C
Ta 75 C
Ta 25 C
Ta
vs. Drain-Source Voltage
DRAIN CURRENT : I
0.1
1.0
25 C
On-State Resistance
vs. Drain Current ( )
Ta 125 C
Ta 75 C
Ta 25 C
Ta
1.5
25 C
2.0
1
1
2.5
10
3.0
V
Pulsed
Ta 25 C
f 1MHz
V
V
Pulsed
D
DS
GS
GS
(A)
3.5
GS
DS
0V
C
C
C
10V
(V)
(V)
iss
oss
rss
10V
100
4.0
10
10000
1000
1000
100
100
10
200
150
100
10
1
0.01
50
0
0.1
Fig.2 Switching Characteristics
0
Fig.5 Static Drain-Source
I
GATE-SOURCE VOLTAGE : V
D
Fig.8 Static Drain-Source
t
2
d (off)
3.5A
DRAIN CURRENT : I
DRAIN CURRENT : I
On-State Resistance vs.
Gate-Source Voltage
t
f
4
On-State Resistance
vs. Drain Current ( )
0.1
Ta 125 C
Ta 75 C
Ta 25 C
Ta
I
D
6
7.0A
25 C
1
8
10
t
1
d (on)
Ta 25 C
V
V
R
Pulsed
D
V
Pulsed
12
D
DD
GS
G
GS
(A)
Ta 25 C
Pulsed
(A)
10
t
r
GS
14
15V
10V
4.5V
(V)
10
10
16
1000
0.01
100
0.1
10
10
1
8
7
6
5
4
3
2
1
0
0.0
0.1
Fig.3 Dynamic Input Characteristics
0
SOURCE-DRAIN VOLTAGE : V
Ta 125 C
Ta 75 C
Ta 25 C
Ta
Fig.9 Static Drain-Source
Fig.6 Source Current vs.
TOTAL GATE CHARGE : Qg (nC)
5
25 C
DRAIN CURRENT : I
Source-Drain Voltage
On-State Resistance
vs. Drain Current ( )
0.5
10
Ta 125 C
Ta 75 C
Ta 25 C
Ta
15
1
25 C
SP8M5
1.0
20
D
Ta 25 C
V
I
R
Pulsed
D
V
Pulsed
DD
G
(A)
GS
V
Pulsed
25
10
GS
SD
7A
15V
0V
4V
(V)
5/5
1.5
10
30