SP8M7FU6TB Rohm Semiconductor, SP8M7FU6TB Datasheet - Page 4

• Manufacturer Part Number: SP8M7FU6TB
• Description: MOSFET N/P-CH 30V 5A/7A 8SOIC
• Manufacturer: Rohm Semiconductor

Specifications of SP8M7FU6TB

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 51 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A, 7A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 5.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 230pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
N-ch
Electrical characteristic curves
0.001
1000
0.01
100
0.1
1000
10
10
100
0.01
1
Fig.4 Typical Transfer Characteristics
10
0.0
1
0.1
Fig.1 Typical Capacitance
DRAIN-SOURCE VOLTAGE : V
GATE-SOURCE VOLTAGE : V
Ta 125 C
Ta 75 C
Ta 25 C
Ta
0.5
Fig.7 Static Drain-Source
Ta 125 C
Ta 75 C
Ta 25 C
Ta
vs. Drain-Source Voltage
25 C
0.1
1.0
DRAIN CURRENT : I
25 C
On-State Resistance
vs. Drain Current ( )
1.5
2.0
1
1
2.5
10
3.0
Ta 25 C
f 1MHz
V
V
Pulsed
D
V
Pulsed
GS
DS
(A)
GS
GS
DS
3.5
0V
10V
C
C
C
(V)
10V
(V)
iss
oss
rss
100
4.0
10
10000
1000
1000
100
100
300
250
200
150
100
10
10
1
0.01
50
1
0.1
0
Fig.2 Switching Characteristics
0
Fig.5 Static Drain-Source
Ta 125 C
Ta 75 C
Ta 25 C
Ta
t
t
d (off)
d (on)
GATE-SOURCE VOLTAGE : V
Fig.8 Static Drain-Source
t
t
f
r
2
25 C
DRAIN CURRENT : I
DRAIN CURRENT : I
On-State Resistance vs.
Gate-Source Voltage
4
On-State Resistance
vs. Drain Current ( )
0.1
I
I
D
D
5A
2.5A
6
1
8
10
1
D
D
12
Ta 25 C
V
V
R
Pulsed
V
Pulsed
(A)
(A)
Ta 25 C
Pulsed
DD
GS
G
GS
10
GS
15V
10V
14
4.5V
(V)
10
10
16
1000
0.01
100
0.1
10
10
10
1
1
9
8
7
6
5
4
3
2
1
0
0.0
0.1
Fig.3 Dynamic Input Characteristics
0
Ta 25 C
V
I
R
Pulsed
D
SOURCE-DRAIN VOLTAGE : V
DD
Ta 125 C
Ta 75 C
Ta 25 C
Ta
G
Fig.9 Static Drain-Source
Fig.6 Source Current vs.
Ta 125 C
Ta 75 C
Ta 25 C
Ta
5A
TOTAL GATE CHARGE : Qg (nC)
10
1
15V
25 C
DRAIN CURRENT : I
25 C
2
On-State Resistance
vs. Drain Current ( )
Source-Drain Voltage
0.5
3
1
4
5
SP8M7
1.0
D
6
(A)
V
Pulsed
V
Pulsed
GS
GS
SD
7
(V)
0V
4V
4/5
1.5
10
8