SP8K31TB1 Rohm Semiconductor, SP8K31TB1 Datasheet - Page 2

• Manufacturer Part Number: SP8K31TB1
• Description: MOSFET 2N-CH 60V 3.5A 8SOIC
• Manufacturer: Rohm Semiconductor

Specifications of SP8K31TB1

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 5.2nC @ 5V
• Input Capacitance (ciss) @ Vds: 250pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistor
<It is the same characteristics for the Tr1 and Tr2.>
<It is the same characteristics for the Tr1 and Tr2.>
∗Pulsed
∗Pulsed
Forward voltage
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
Q
Q
d (on)
d (off)
GSS
DSS
Y
Q
t
t
oss
SD
rss
iss
fs
r
f
gs
gd
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Min.
1.0
2.5
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
100
105
250
3.7
1.2
1.2
85
60
30
14
25
−
−
−
−
−
−
7
7
Max.
Max.
±10
120
140
150
2.5
5.2
1.2
−
1
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
mΩ
mΩ
nC
nC
nC
µA
µA
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
I
V
I
V
V
I
I
I
V
V
V
f=1MHz
V
I
V
R
R
V
I
R
S
D
D
D
D
D
D
GS
DS
DS
DS
DS
GS
DD
GS
DD
L
G
L
=3.5A, V
= 1mA, V
= 3.5A, V
= 3.5A, V
= 3.5A, V
= 1.8A
= 3.5A
= 17Ω
= 8.6Ω , R
=10Ω
= 60V, V
= 10V, I
= 10V, I
= 10V
= 10V
=±20V, V
=0V
30V, V
30 V
GS
Conditions
Conditions
GS
GS
GS
GS
D
D
G
GS
=0V
= 1mA
= 3.5A
GS
DS
= 10Ω
=0V
= 10V
= 4.5V
= 4.0V
=0V
= 5V
=0V
SP8K31
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