SP8M6FU6TB Rohm Semiconductor, SP8M6FU6TB Datasheet - Page 3

• Manufacturer Part Number: SP8M6FU6TB
• Description: MOSFET N/P-CH 30V 5A/3.5A 8SOIC
• Manufacturer: Rohm Semiconductor

Specifications of SP8M6FU6TB

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 51 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A, 3.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 230pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.051 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5 A, - 3.5 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
P-ch
∗Pulsed
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
GSS
DSS
Q
t
t
oss
SD
iss
rss
r
gd
fs
f
gs
g
Min.
−1.0
Min.
−30
1.8
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
100
120
490
110
5.5
1.5
2.0
65
75
10
15
35
10
−
−
−
−
−
−
Max.
Max.
−2.5
−1.2
140
−10
165
−1
90
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
I
V
V
f=1MHz
I
V
R
R
V
V
I
I
D
D
D
D
D
D
D
S
GS
DS
DS
DS
GS
GS
L
G
DD
GS
= −1.0A, V
= −1mA, V
= −3.5A, V
= −1.75A, V
= −1.75A, V
= −1.75A, V
= −1.75A, V
= −3.5A
=8.6Ω
=10Ω
= −30V, V
= −10V, I
= −10V
= −20V, V
=0V
= −10V
= −5V
−15V
Conditions
Conditions
GS
GS
GS
D
GS
GS
GS
DS
DD
DS
= −1mA
=0V
= −10V
=0V
= −10V
=0V
=0V
= −4.5V
= −4.0V
−15V
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Rev.A
SP8M6
3/5