SH8M3TB1 Rohm Semiconductor, SH8M3TB1 Datasheet - Page 4

• Manufacturer Part Number: SH8M3TB1
• Description: MOSFET N/P-CH 30V SOP8
• Manufacturer: Rohm Semiconductor

Specifications of SH8M3TB1

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 51 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A, 4.5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 3.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 230pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 58 mOhms
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SH8M3TB1TR

N-ch
Electrical characteristic curves
○
SH8M3
c
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0.001
1000
1000
0.01
100
100
0.1
10
10
10
1
0.1
0.01
1
Fig.4 Typical Transfer Characteristics
0.0
Fig.1 Typical Capacitance
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
DRAIN-SOURCE VOLTAGE : V
GATE-SOURCE VOLTAGE : V
Fig.7 Static Drain-Source
0.5
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
DRAIN CURRENT : I
vs. Drain-Source Voltage
0.1
1.0
On-State Resistance
vs. Drain Current (Ι)
1.5
2.0
1
1
2.5
D
10
3.0
V
Pulsed
(A)
Ta=25°C
f=1MHz
V
V
Pulsed
GS
GS
DS
=10V
DS
GS
=0V
=10V
3.5
C
C
C
(V)
(V)
iss
oss
rss
10
100
4.0
10000
1000
1000
100
100
10
300
250
200
150
100
10
1
0.1
1
0.01
50
0
Fig.2 Switching Characteristics
0
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Fig.5 Static Drain-Source
t
Fig.8 Static Drain-Source
t
d (off)
d (on)
GATE-SOURCE VOLTAGE : V
t
t
f
r
2
DRAIN CURRENT : I
DRAIN CURRENT : I
On-State Resistance vs.
Gate-Source Voltage
On-State Resistance
vs. Drain Current (ΙΙ)
4
0.1
I
I
4/5
D
D
=5A
=2.5A
6
1
8
10
1
D
D
V
Pulsed
12
(A)
Ta=25°C
V
V
R
Pulsed
(A)
GS
Ta=25°C
Pulsed
DD
GS
G
=10Ω
=4.5V
=15V
=10V
GS
14
(V)
10
10
16
0.01
1000
0.1
100
10
10
10
1
9
8
7
6
5
4
3
2
1
0
0.0
1
0.1
Fig.3 Dynamic Input Characteristics
0
Ta=25°C
V
I
R
Pulsed
D
SOURCE-DRAIN VOLTAGE : V
DD
=5A
G
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Fig.9 Static Drain-Source
Fig.6 Source Current vs.
=10Ω
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
TOTAL GATE CHARGE : Qg (nC)
=15V
1
DRAIN CURRENT : I
2
On-State Resistance
vs. Drain Current (ΙΙΙ)
Source-Drain Voltage
2009.12 - Rev.A
0.5
3
Data Sheet
1
4
5
1.0
D
6
(A)
V
Pulsed
V
Pulsed
GS
GS
SD
7
=0V
=4V
(V)
1.5
10
8