SH8M2TB1 Rohm Semiconductor, SH8M2TB1 Datasheet

SH8M2TB1

Manufacturer Part Number

SH8M2TB1

Description

MOSFET N/P-CH 30V SOP8

Manufacturer

Rohm Semiconductor

Datasheet

1.SH8M2TB1.pdf (4 pages)

Specifications of SH8M2TB1

Fet Type

N and P-Channel

Fet Feature

Standard

Rds On (max) @ Id, Vgs

83 mOhm @ 3.5A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

3.5A

Vgs(th) (max) @ Id

2.5V @ 1mA

Gate Charge (qg) @ Vgs

3.5nC @ 5V

Input Capacitance (ciss) @ Vds

140pF @ 10V

Power - Max

Mounting Type

Surface Mount

Package / Case

8-SOP

Transistor Polarity

N and P-Channel

Resistance Drain-source Rds (on)

107 mOhms

Forward Transconductance Gfs (max / Min)

2 S

Drain-source Breakdown Voltage

30 V

Continuous Drain Current

3.5 A

Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SH8M2TB1TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SH8M2TB1

Manufacturer:

ROHM/罗姆

Quantity:

20 000

Current page: 1 of 4
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4V Drive Nch+Pch MOSFET

Structure

Features

1) Low on-resistance.

2) Built-in G-S protection diode.

3) Small surface mount package (SOP8).

Application

Power switching, DC / DC converter.

Packaging specifications

Absolute maximum ratings (Ta=25C)

∗1 Pw≤10μs, Duty cycle≤1%

∗2 Mounted on a ceramic board.

○

Drain-source voltage

Gate-source voltage

Drain current

Source current

(Body diode)

Total power dissipation

Channel temperature

Storage temperature

Type

SH8M2

www.rohm.com

Silicon N-channel / P-channel MOSFET

SH8M2

Parameter

Package

Code

Basic ordering unit (pieces)

Continuous

Pulsed

Continuous

Pulsed

Taping

2500

Symbol

Tstg

Tch

DSS

GSS

∗1

∗2

Tr1 : N-ch

±3.5

±20

±14

1.6

−55 to +150

Limits

150

2.0

Tr2 : P-ch

±3.5

−1.6

−30

±20

±14

−14

1/3

W / TOTAL

Unit

°C

Dimensions (Unit : mm)

Inner circuit

SOP8

∗2

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

(8)

(1)

∗1

(7)

(2)

∗2

(6)

(3)

∗1

Each lead has same dimensions

(5)

(4)

2009.12 - Rev.A

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

Related parts for SH8M2TB1

SH8M2TB1 Summary of contents

Page 1

Drive Nch+Pch MOSFET SH8M2 Structure Silicon N-channel / P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small surface mount package (SOP8). Application Power switching converter. Packaging specifications Package Taping Type Code TB ...

Page 2

SH8M2 N-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. Gate-source leakage I GSS Drain-source breakdown voltage V 30 (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V 1.0 GS (th) Static drain-source on-state ∗ (on) ...

Page 3

SH8M2 P-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. Gate-source leakage I GSS −30 Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS −1.0 Gate threshold voltage V GS (th) Static drain-source on-state ∗ (on) ...

Page 4

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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