SI5903DC-T1-E3 Vishay, SI5903DC-T1-E3 Datasheet - Page 3
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SI5903DC-T1-E3
Manufacturer Part Number
SI5903DC-T1-E3
Description
MOSFET DUAL P-CH 20V 2.1A 1206-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI5903DC-T1-E3.pdf
(5 pages)
Specifications of SI5903DC-T1-E3
Transistor Polarity
P-Channel
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
155 mOhm @ 2.1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.1A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
1206-8 ChipFET™
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.155 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2.1 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-2.9A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
260mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
-600mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI5903DC-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI5903DC-T1-E3
Manufacturer:
VISHAY
Quantity:
1 294
Part Number:
SI5903DC-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71054
S10-0547-Rev. C, 08-Mar-10
10
0.4
0.3
0.2
0.1
0.0
1
5
4
3
2
1
0
0.0
0.0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
0.2
= 2.1 A
V
0.5
On-Resistance vs. Drain Current
GS
= 10 V
2
V
= 2.5 V
SD
0.4
Q
- Source-to-Drain Voltage (V)
g
1.0
I
T
- Total Gate Charge (nC)
D
J
- Drain Current (A)
Gate Charge
= 150
0.6
4
1.5
°C
V
0.8
GS
6
= 3.6 V
2.0
1.0
T
J
V
= 25
GS
8
2.5
= 4.5 V
1.2
°C
1.4
3.0
10
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
rss
V
I
D
- 25
GS
= 2.1 A
= 4.5 V
4
1
T
V
0
V
J
C
GS
DS
C
- Junction Temperature (
oss
iss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
8
2
50
Vishay Siliconix
I
D
= 2.1 A
12
3
75
Si5903DC
°C)
www.vishay.com
100
16
4
125
150
20
5
3