SI5903DC-T1-E3 Vishay, SI5903DC-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI5903DC-T1-E3
• Description: MOSFET DUAL P-CH 20V 2.1A 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5903DC-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.155 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -2.9A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 260mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5903DC-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71054
S10-0547-Rev. C, 08-Mar-10
10
0.4
0.3
0.2
0.1
0.0
1
5
4
3
2
1
0
0.0
0.0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
0.2
= 2.1 A
V
0.5
On-Resistance vs. Drain Current
GS
= 10 V
2
V
= 2.5 V
SD
0.4
Q
- Source-to-Drain Voltage (V)
g
1.0
I
T
- Total Gate Charge (nC)
D
J
- Drain Current (A)
Gate Charge
= 150
0.6
4
1.5
°C
V
0.8
GS
6
= 3.6 V
2.0
1.0
T
J
V
= 25
GS
8
2.5
= 4.5 V
1.2
°C
1.4
3.0
10
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
rss
V
I
D
- 25
GS
= 2.1 A
= 4.5 V
4
1
T
V
0
V
J
C
GS
DS
C
- Junction Temperature (
oss
iss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
8
2
50
Vishay Siliconix
I
D
= 2.1 A
12
3
75
Si5903DC
°C)
www.vishay.com
100
16
4
125
150
20
5
3