ZDM4206NTC Diodes Zetex, ZDM4206NTC Datasheet - Page 2

• Manufacturer Part Number: ZDM4206NTC
• Description: MOSFET DUAL N-CHAN SOT-223-8
• Manufacturer: Diodes Zetex

Specifications of ZDM4206NTC

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 100pF @ 25V
• Power - Max: 2.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (8 leads), SM8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2%
(2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse
generator
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2) C
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
ZDM4206N
10
10
8
8
6
6
4
4
2
2
0
0
0
0
V
V
DS
DS
Output Characteristics
Output Characteristics
10
10
- Drain Source Voltage (Volts)
- Drain Source Voltage (Volts)
V
V
20V
20V
16V
16V
14V
14V
12V
12V
GS=
GS=
20
20
TYPICAL CHARACTERISTICS
30
30
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
t
t
t
t
40
40
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
DSS
50
50
10V
10V
6V
6V
5V
5V
4.5V
4.5V
4V
4V
3.5V
3.5V
9V
9V
8V
8V
7V
7V
60
1.3
3
300
3 - 318
amb
= 25°C unless otherwise stated).
MAX.
3
100
10
100
1
1.5
100
60
20
8
12
12
15
10
10
8
8
6
6
4
4
2
2
0
0
V
V
Saturation Characteristics
Saturation Characteristics
UNIT CONDITIONS.
V
V
nA
A
mS
pF
pF
pF
ns
ns
ns
ns
DS
DS
A
A
- Drain Source Voltage (Volts)
- Drain Source Voltage (Volts)
2
2
I
I
V
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
GS
DS
DS
DD
=1mA, V
=1mA, V
=60V, V
=48V, V
=25V, V
=25V,I
=25V, V
= 20V, V
=10V,I
=5V,I
4
4
25V, I
D
=0.5A
D
D
GS
DS
=1.5A
=1.5A
GS
GS
GS
GS
D
6
6
=0V
= V
=1.5A,V
DS
=0
=0V, T=125°C
=10V
=0V, f=1MHz
=0V
GS
8
8
GEN
=10V
10
10
(2)
V
V
20V
20V
14V
14V
16V
16V
12V
12V
10V
10V
6V
6V
5V
5V
4.5V
4.5V
3.5V
3.5V
9V
9V
8V
8V
7V
7V
4V
4V
GS=
GS=