ZXMC4A16DN8TA Diodes Zetex, ZXMC4A16DN8TA Datasheet - Page 4

MOSFET N/P-CHAN DUAL 40V 8SOIC

ZXMC4A16DN8TA

Manufacturer Part Number
ZXMC4A16DN8TA
Description
MOSFET N/P-CHAN DUAL 40V 8SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMC4A16DN8TA

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
4A, 3.6A
Vgs(th) (max) @ Id
1V @ 250mA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
770pF @ 40V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMC4A16DN8TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMC4A16DN8TA
Manufacturer:
ZETEX
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(
ZXMC4A16DN8
3) For design aid only, not subject to production testing.
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
S E M I C O N D U C T O R S
(3)
(2) (3)
(1)
(3)
(3)
(1) (3)
(1)
300 s; duty cycle
SYMBOL
V
I
I
V
R
g
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
DSS
GSS
amb
(BR)DSS
GS(th)
DS(on)
fs
= 25°C unless otherwise stated)
4
2%.
MIN.
1.0
40
TYP.
770
8.6
3.3
4.7
2.5
3.8
0.8
92
61
29
14
17
20
16
MAX. UNIT CONDITIONS
0.050
0.075
0.95
100
0.5
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ISSUE 1 - NOVEMBER 2004
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
T
V
T
di/dt=100A/ s
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
= 250 A, V
= 250mA, V
= 4.5A
=25°C, I
=25°C, I
≅6.0 , V
=40V, V
= 15V, I
= 40V, V
= 30V, V
=±20V, V
= 10V, I
= 4.5V, I
= 30V, I
=0V
S
S
= 4.5A,
= 2.5A,
D
GS
D
D
GS
D
GS
GS
= 4.5A
= 4.5A
= 1A
DS
GS
= 3.2A
DS
=0V
= 10V
=0V
= 10V
=0V
=0V
=V
GS

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