SI4916DY-T1-E3 Vishay, SI4916DY-T1-E3 Datasheet
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SI4916DY-T1-E3
Specifications of SI4916DY-T1-E3
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SI4916DY-T1-E3 Summary of contents
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... Ordering Information: Si4916DY-T1-E3 (Lead (Pb)-free) Si4916DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source-Drain Diode Current PulseD Source-Drain Current Single-Pulse Avalanche Current Single-Pulse Avalanche Energy ...
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... Si4916DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 112 °C/W for Channel 1 and 107 °C/W for Channel 2. MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Δ ...
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... A, dI/dt = 100 µA/µ 1.3 A, dI/dt = 100 A/µ 2.2 A, dI/dt = 100 µA/µ °C, unless otherwise noted J Test Conditions 125 ° 100 ° 125 ° Si4916DY Vishay Siliconix a Min. Typ. Max. Unit Ch-2 12 Ch-1 ...
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... Si4916DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.00 0.30 0.60 V – Drain-to-Source Voltage (V) DS Output Characteristics 0.025 0.022 0.019 0.016 V 0.013 0.010 – Drain Current (A) D On-Resistance vs. Drain Current 7 – Total Gate Charge (nC) g Gate Charge www.vishay.com ...
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... Limited DS(on D(on) Limited °C C 0.1 Single Pulse BVDSS Limited 0.01 0 – Drain-to-Source Voltage ( > minimum V at which Safe Operating Area Si4916DY Vishay Siliconix 0.05 0. 0.02 0.01 0. – Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 120 100 0.001 0.01 0.1 ...
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... Si4916DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient ...
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... Total Gate Charge (nC) g Gate Charge Document Number: 74331 S09-0540-Rev. B, 06-Apr- thru 0.9 1.2 1.5 1400 1120 6.6 8.8 11.0 Si4916DY Vishay Siliconix 125 ° ° 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V – Gate-to-Source Voltage (V) GS Transfer Characteristics C iss ...
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... Si4916DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage – Temperature (°C) J Reverse Current vs. Junction Temperature www.vishay.com 8 0.05 0.04 0. °C J 0.02 0.01 0.00 1.0 1 ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74331. Document Number: 74331 S09-0540-Rev. B, 06-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4916DY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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