ZXMD63N03XTC Diodes Zetex, ZXMD63N03XTC Datasheet - Page 2

• Manufacturer Part Number: ZXMD63N03XTC
• Description: MOSFET DUAL N-CHAN 30V 8MSOP
• Manufacturer: Diodes Zetex

Specifications of ZXMD63N03XTC

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 290pF @ 25V
• Power - Max: 870mW
• Mounting Type: Surface Mount
• Package / Case: 8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - OCTOBER 2005
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
Pulsed Source Current (Body Diode)(c)(d)
A
A
A
=25°C (a)(d)
=25°C (a)(e)
=25°C (b)(d)
(V
(V
GS
GS
=4.5V; T
=4.5V; T
A
A
=25°C)(b)(d)
=70°C)(b)(d)
SYMBOL
R
R
R
2
θJA
θJA
θJA
SYMBOL
V
V
I
I
I
I
P
P
P
T
D
DM
S
SM
D
D
D
j
DSS
GS
:T
stg
-55 to +150
VALUE
143
100
120
LIMIT
0.87
1.04
1.25
±20
2.3
1.8
1.5
6.9
8.3
ZXMD63N03X
30
14
14
10
S E M I C O N D U C T O R S
mW/°C
mW/°C
mW/°C
UNIT
°C/W
°C/W
°C/W
UNIT
°C
W
W
W
A
A
A
A
V
V