ZXMC3A17DN8TC Diodes Zetex, ZXMC3A17DN8TC Datasheet - Page 4

MOSFET N/P-CHAN DUAL 30V 8SOIC

ZXMC3A17DN8TC

Manufacturer Part Number
ZXMC3A17DN8TC
Description
MOSFET N/P-CHAN DUAL 30V 8SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMC3A17DN8TC

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 7.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.1A, 3.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
12.2nC @ 10V
Input Capacitance (ciss) @ Vds
600pF @ 25V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMC3A17DN8TC
Manufacturer:
ZETEX
Quantity:
20 000
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
(1)
(2)
(3)
ZXMC3A17DN8
PARAMETER
STATIC
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Gate-Source Threshold
Voltage
Static Drain-Source On-State
Resistance
Forward
Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
S E M I C O N D U C T O R S
Measured under pulsed conditions. Pulse width
Switching characteristics are independent of operating junction temperature.
For design aid only, not subject to production testing.
(3)
(1)
(2) (3)
(1) (3)
(1)
(3)
(3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
300ms; Duty cycle
amb
= 25°C unless otherwise stated)
MIN.
30
1.0
4
2%.
TYP.
10
600
104
58.5
2.9
6.4
16
11.2
6.9
12.2
1.7
2.4
0.85
18.8
14.1
MAX.
0.5
100
0.050
0.065
0.95
ADVANCE INFORMATION
UNIT
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
A
ISSUE 1 - OCTOBER 2005
CONDITIONS
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
V
I
V
I
T
V
T
di/dt=100A/ s
D
D
D
D
DS
GS
GS
DS
DS
DD
G
GS
DS
DS
j
GS
j
GS
= 250 A, V
= 250 A, V
= 3.5A
= 3.5A
=25°C, I
=25°C, I
≅ 6.0 ,
=30V, V
= 10V, I
= 25V, V
= 15V, V
= 15V, V
=±20V, V
= 10V, I
= 4.5V, I
= 15V, I
=0V
= 10V
S
F
= 3.5A,
= 3.2A,
D
D
GS
D
D
GS
GS
GS
= 7.8A
= 7.8A
=3.5A
GS
DS
DS
= 6.8A
=0V
=0V
= 5V
= 10V
=V
=0V
=0V
GS

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