SI3585DV-T1-E3 Vishay, SI3585DV-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI3585DV-T1-E3
• Description: MOSFET N/P-CH 20V 2A/1.5A 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3585DV-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A, 1.5A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 3.2nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.125 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 19A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Power Dissipation Pd: 1.15W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3585DV-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71184
S09-2275-Rev. D, 02-Nov-09
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
0.01
8
6
4
2
0
0.1
0
0
2
1
V
10
GS
-4
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
= 4.5 V thru 4 V
1
On-Resistance vs. Drain Current
1
V
V
GS
DS
Output Characteristics
Single Pulse
2
= 2.5 V
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
2
3
10
-3
4
3
V
Normalized Thermal Transient Impedance, Junction-to-Foot
GS
3.5 V
= 3.6 V
V
3 V
5
GS
= 4.5 V
4
2.5 V
2 V
6
1.5 V
Square Wave Pulse Duration (s)
10
5
7
-2
10
450
360
270
180
90
-1
8
6
4
2
0
0
0.0
0
C
rss
0.5
C
4
oss
V
V
1.0
Transfer Characteristics
GS
DS
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1.5
Capacitance
8
1
C
2.0
Vishay Siliconix
iss
T
25 °C
C
= - 55 °C
12
2.5
Si3585DV
www.vishay.com
3.0
16
125 °C
3.5
10
4.0
20
5