SI3585DV-T1-E3 Vishay, SI3585DV-T1-E3 Datasheet - Page 5
![MOSFET N/P-CH 20V 2A/1.5A 6-TSOP](/photos/5/42/54267/pkg_5540_sml.jpg)
SI3585DV-T1-E3
Manufacturer Part Number
SI3585DV-T1-E3
Description
MOSFET N/P-CH 20V 2A/1.5A 6-TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets
1.SI3585DV-T1-E3.pdf
(8 pages)
2.SI3585DV-T1-E3.pdf
(5 pages)
3.SI3585DV-T1-E3.pdf
(8 pages)
Specifications of SI3585DV-T1-E3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
125 mOhm @ 2.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2A, 1.5A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
3.2nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.125 Ohm @ 4.5 V @ N Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2 A
Power Dissipation
830 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
19A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
4.5V
Power Dissipation Pd
1.15W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3585DV-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3585DV-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
26 955
Part Number:
SI3585DV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71184
S09-2275-Rev. D, 02-Nov-09
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
0.01
8
6
4
2
0
0.1
0
0
2
1
V
10
GS
-4
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
= 4.5 V thru 4 V
1
On-Resistance vs. Drain Current
1
V
V
GS
DS
Output Characteristics
Single Pulse
2
= 2.5 V
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
2
3
10
-3
4
3
V
Normalized Thermal Transient Impedance, Junction-to-Foot
GS
3.5 V
= 3.6 V
V
3 V
5
GS
= 4.5 V
4
2.5 V
2 V
6
1.5 V
Square Wave Pulse Duration (s)
10
5
7
-2
10
450
360
270
180
90
-1
8
6
4
2
0
0
0.0
0
C
rss
0.5
C
4
oss
V
V
1.0
Transfer Characteristics
GS
DS
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
1.5
Capacitance
8
1
C
2.0
Vishay Siliconix
iss
T
25 °C
C
= - 55 °C
12
2.5
Si3585DV
www.vishay.com
3.0
16
125 °C
3.5
10
4.0
20
5