SI1902DL-T1-E3 Vishay, SI1902DL-T1-E3 Datasheet

MOSFET N-CH DUAL 20V SC70-6

SI1902DL-T1-E3

Manufacturer Part Number
SI1902DL-T1-E3
Description
MOSFET N-CH DUAL 20V SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr
Datasheets

Specifications of SI1902DL-T1-E3

Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
385 mOhm @ 660ma, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
660mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.2nC @ 4.5V
Power - Max
270mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.385 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.66 A
Power Dissipation
270 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
660mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
1.5V
Rohs Compliant
Yes
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.385Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SC-70
Module Configuration
Dual
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1902DL-T1-E3TR

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Part Number:
SI1902DL-T1-E3
0
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Part Number:
SI1902DL-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71080
S09-2683-Rev. I, 14-Dec-09
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
20
(V)
0.385 at V
0.630 at V
R
DS(on)
J
a
= 150 °C)
a
Dual N-Channel 20-V (D-S) MOSFET
Ordering Information: Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel)
GS
GS
G
D
S
1
1
2
(Ω)
= 4.5 V
= 2.5 V
1
2
3
SC-70 (6-LEADS)
a
SOT-363
Top
View
a
Steady State
Steady State
A
Si1902DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
I
t ≤ 5 s
D
0.70
0.54
= 25 °C, unless otherwise noted
T
T
T
T
(A)
A
A
A
A
6
5
4
= 25 °C
= 85 °C
= 25 °C
= 85 °C
D
G
S
1
2
2
Symbol
Marking Code
R
M a r k in g C o d e
Symbol
R
T
P A X
PA
thJA
thJF
J
FEATURES
V
V
I
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
P
, T
I
DM
I
DS
GS
D
S
D
stg
Definition
X
Part # Code
Lot Traceability
and Date Code
L o t T
Typical
®
0.70
0.50
0.25
0.30
0.16
360
400
300
5 s
Power MOSFETs: 2.5 V Rated
- 55 to 150
±12
1.0
20
Steady State
Maximum
0.66
0.48
0.23
0.27
0.14
415
460
350
Vishay Siliconix
Si1902DL
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI1902DL-T1-E3

SI1902DL-T1-E3 Summary of contents

Page 1

... SC-70 (6-LEADS Ordering Information: Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si1902DL Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Gate Charge 150 °C J 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Surge-Drain Diode Forward Voltage Document Number: 71080 S09-2683-Rev. I, 14-Dec- 4 0.6 0.8 1.0 0.6 0 °C J 0.8 1.0 1.2 Si1902DL Vishay Siliconix 100 80 C iss oss 20 C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1 ...

Page 4

... Si1902DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.2 0 0.1 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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