SI1555DL-T1-E3 Vishay, SI1555DL-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI1555DL-T1-E3
• Description: MOSFET N/P-CH 20/8V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1555DL-T1-E3

• Transistor Polarity: N and P-Channel
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 385 mOhm @ 660ma, 4.5V
• Drain To Source Voltage (vdss): 20V, 8V
• Current - Continuous Drain (id) @ 25° C: 660mA, 570mA
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 1.2nC @ 4.5V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.385 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V @ N Channel or 8 V @ P Channel
• Gate-source Breakdown Voltage: +/- 12 V @ N Channel or +/- 8 V @ P Channel
• Continuous Drain Current: 0.66 A @ N Channel or 0.57 A @ P Channel
• Power Dissipation: 270 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 660mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 320mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 600mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1555DL-T1-E3TR

Si1555DL
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.1
5
4
3
2
1
0
1
- 50
0.0
0.0
V
I
D
- 25
DS
0.2
Source-Drain Diode Forward Voltage
= 0.57 A
0.2
= 4 V
V
0.4
T
SD
0
J
Q
- Junction Temperature (°C)
g
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
- Total Gate Charge (nC)
T
J
0.6
25
Gate Charge
= 150 °C
0.6
0.8
50
I
D
= 250 µA
1.0
75
0.8
100
T
1.2
J
= 25 °C
1.0
125
1.4
150
1.6
1.2
1.6
1.4
1.2
1.0
0.8
0.6
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
- 50
10
0
-3
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 0.57 A
10
= 4.5 V
-2
1
V
T
GS
0
J
Single Pulse Power
- Junction Temperature (°C)
10
- Gate-to-Source Voltage (V)
-1
25
I
2
D
Time (s)
= 0.57 A
S10-1054-Rev. E, 03-May-10
50
1
Document Number: 71079
3
75
10
100
4
100
125
150
600
5