SI1025X-T1-E3 Vishay, SI1025X-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1025X-T1-E3
• Description: MOSFET P-CH DUAL 60V SOT563F
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1025X-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 190mA
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 1.7nC @ 15V
• Input Capacitance (ciss) @ Vds: 23pF @ 25V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 4 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.19 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 500mA
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 5ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1025X-T1-E3TR

TYPICAL CHARACTERISTICS (T
Document Number: 71433
S10-2432-Rev. C, 25-Oct-10
1000
100
20
16
12
10
15
12
8
4
0
9
6
3
0
1
0.00
0.0
0
V
I
GS
D
Source-Drain Diode Forward Voltage
T
0.3
= 500 mA
J
200
On-Resistance vs. Drain Current
= 0 V
0.3
= 125 °C
V
SD
Q
I
g
- Source-to-Drain Voltage (V)
D
0.6
- Total Gate Charge (nC)
V
- Drain Current (mA)
GS
V
400
Gate Charge
0.6
GS
V
= 4.5 V
DS
= 5 V
0.9
= 30 V
600
T
0.9
V
J
GS
T
= - 55 °C
1.2
J
= 25 °C
= 10 V
A
= 25 °C, unless otherwise noted)
V
800
1.2
DS
1.5
= 48 V
1000
1.5
1.8
1.8
1.5
1.2
0.9
0.6
0.3
0.0
40
32
24
16
10
8
0
8
6
4
2
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
5
GS
V
2
V
GS
V
T
GS
0
= 10 V at 500 mA
DS
J
= 0 V
I
- Junction Temperature (°C)
D
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
= 200 mA
25
Capacitance
10
4
50
Vishay Siliconix
V
GS
C
15
C
C
6
oss
75
iss
rss
= 4.5 V at 25 mA
I
D
Si1025X
100
= 500 mA
www.vishay.com
20
8
125
150
25
10
3