SI1023X-T1-E3 Vishay, SI1023X-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1023X-T1-E3
• Description: MOSFET P-CH DUAL 20V SOT563F
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1023X-T1-E3

• Transistor Polarity: Dual P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 350mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 370mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 2.7 Ohms
• Forward Transconductance Gfs (max / Min): 0.4 S
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: - 370 mA
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -350mA
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 2.7ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1023X-T1-E3TR

Si1023X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71169.
www.vishay.com
4
- 0.1
- 0.2
- 0.3
0.3
0.2
0.1
0.0
0.01
0.1
- 50
2
1
10
Threshold Voltage Variance vs. Temperature
0.05
-4
0.2
0.1
0.02
- 25
Duty Cycle = 0.5
0
T
J
- Temperature (°C)
10
Single Pulse
25
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
I
D
50
= 0.25 mA
7
6
5
4
3
2
1
0
- 50
75
A
10
= 25 °C, unless otherwise noted)
-2
- 25
100
BV
0
125
GSS
Square Wave Pulse Duration (s)
T
J
- Temperature (°C)
10
vs. Temperature
25
-1
50
75
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
- 50
125
- 25
V
GS
= 4.5 V
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
0
I
GSS
DM
JM
T
J
- T
- Temperature (°C)
vs. Temperature
t
A
25
1
= P
t
2
DM
S10-2432-Rev. C, 25-Oct-10
Z
Document Number: 71169
thJA
50
thJA
100
t
t
1
2
(t)
= 500 °C/W
75
100
6
0
0
125