IRF7303QTRPBF International Rectifier, IRF7303QTRPBF Datasheet

MOSFET N-CH DUAL 30V 8-SOIC

IRF7303QTRPBF

Manufacturer Part Number
IRF7303QTRPBF
Description
MOSFET N-CH DUAL 30V 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets
1.IRF7303QTRPBF.pdf (9 pages)
2.IRF7303.pdf (9 pages)

Specifications of IRF7303QTRPBF

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
50 mOhm @ 2.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
520pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Module Configuration
Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
4.9A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7303QTRPBFCT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF7303QTRPBF
Manufacturer:
VISHAY
Quantity:
45 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7303QTRPBF
Manufacturer:
IR
Quantity:
20 000
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications.
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
Description
Absolute Maximum Ratings
Thermal Resistance Ratings
I
I
I
I
P
V
dv/dt
T
D
D
D
DM
J,
R
D
GS
@ T
@ T
@ T
T
@T
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
JA
STG
A
A
A
A
= 25°C
= 25°C
= 70°C
= 25°C
10 Sec. Pulsed Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
With these improvements,
Parameter
Parameter
GS
GS
@ 10V
@ 10V
GS
@ 10V
G 2
G 1
S 2
S 1
1
2
3
4
Top View
Typ.
HEXFET
–––
8
6
5
7
-55 to + 150
Max.
0.016
D1
D 1
D 2
D2
± 20
5.3
4.9
3.9
2.0
5.0
20
S O -8
®
R
IRF7303
Power MOSFET
Max.
DS(on)
62.5
V
DSS
PD - 9.1239D
= 0.050
= 30V
Units
°C/W
Units
W/°C
V/ns
°C
W
V
A
8/25/97

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IRF7303QTRPBF Summary of contents

Page 1

... Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ...

Page 2

IRF7303 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V 100 10 20 µ 25° rain-to-S ource V oltage ( ...

Page 4

IRF7303 1000 800 600 ...

Page 5

T , Case Temperature C Fig 9. Maximum Drain Current Vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 ...

Page 6

IRF7303 Q 10V Charge Fig 12a. Basic Gate Charge Waveform G GD Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. 3mA Current Sampling Resistors Fig ...

Page 7

Peak Diode Recovery dv/dt Test Circuit + D.U Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple * ...

Page 8

IRF7303 Package Outline SO8 Outline 0.25 (.010 0.25 (.010) ...

Page 9

Tape & Reel Information SO8 Dimensions are shown in millimeters (inches TRO SIO ...

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