ZXMN3A04DN8TA Diodes Zetex, ZXMN3A04DN8TA Datasheet - Page 2

• Manufacturer Part Number: ZXMN3A04DN8TA
• Description: MOSFET 2N-CH 30V 8.5A 8-SOIC
• Manufacturer: Diodes Zetex

Specifications of ZXMN3A04DN8TA

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 12.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 36.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 1890pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN3A04DN8TR

ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to Trnsient
Thermal Impedance Graph.
(d) For a dual device with one active die.
ZXMN3A04DN8
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (b)(e)
Junction to Ambient (b)(d)
A
A
A
=25°C (a)(d)
=25°C (a)(e)
=25°C (b)(d)
(V
(V
GS
GS
GS
=10V; T
=10V; T
=10V; T
A
A
A
=25°C)(b)(d)
=70°C)(b)(d)
=25°C)(a)(d)
10 sec.
2
SYMBOL
V
V
I
I
I
I
P
P
P
T
D
DM
S
SM
SYMBOL
R
R
R
D
D
D
j
DSS
GS
:T
JA
JA
JA
stg
-55 to +150
LIMIT
VALUE
1.25
1.81
14.5
2.15
17.2
8.5
6.8
6.5
3.6
30
39
39
10
100
69
58
20
ISSUE 2 - OCTOBER 2002
mW/°C
mW/°C
mW/°C
UNIT
UNIT
°C/W
°C/W
°C/W
°C
W
W
W
V
V
A
A
A
A