SI1912EDH-T1-E3 Vishay, SI1912EDH-T1-E3 Datasheet

MOSFET N-CH DUAL 20V SC70-6

SI1912EDH-T1-E3

Manufacturer Part Number
SI1912EDH-T1-E3
Description
MOSFET N-CH DUAL 20V SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI1912EDH-T1-E3

Transistor Polarity
N-Channel
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
280 mOhm @ 1.13A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.13A
Vgs(th) (max) @ Id
450mV @ 100µA
Gate Charge (qg) @ Vgs
1nC @ 4.5V
Power - Max
570mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.28 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1.13 A
Power Dissipation
0.74 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
1.28A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
280mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
450mV
Module Configuration
Dual
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1912EDH-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1912EDH-T1-E3
Manufacturer:
VISHY
Quantity:
20 000
Company:
Part Number:
SI1912EDH-T1-E3
Quantity:
12 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71408
S10-1054-Rev. B, 03-May-10
G
Ordering Information: Si1912EDH-T1-E3 (Lead (Pb)-free)
D
S
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode-Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
1
1
2
V
DS
20
1
2
3
SC-70 (6-LEADS)
(V)
SOT-363
Top View
Si1912EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.280 at V
0.360 at V
0.450 at V
6
5
4
R
J
a
DS(on)
D
G
S
= 150 °C)
1
2
2
a
Dual N-Channel 20 V (D-S) MOSFET
GS
GS
GS
(Ω)
= 4.5 V
= 2.5 V
= 1.8 V
Marking Code
a
CA XX
a
Steady State
Steady State
Part # Code
t ≤ 5 s
T
T
T
T
A
A
A
A
A
Lot Traceability
and Date Code
= 25 °C
= 85 °C
= 25 °C
= 85 °C
= 25 °C, unless otherwise noted
I
D
1.28
1.13
1.0
(A)
Symbol
R
R
thJA
thJF
Symbol
T
G
J
1
V
V
I
P
, T
I
DM
I
DS
GS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• ESD Protected: 2000 V
• Thermally Enhanced SC-70 Package
• Compliant to RoHS Directive 2002/95/EC
• Load Switching
• PA Switch
• Level Switch
Definition
1 k
Typical
130
170
80
1.28
0.92
0.61
0.74
0.38
®
5 s
Power MOSFETs: 1.8 V Rated
S
D
1
1
- 55 to 150
± 12
20
4
G
Steady State
2
Maximum
170
220
100
1.13
0.81
0.48
0.57
0.30
Vishay Siliconix
Si1912EDH
1 k
www.vishay.com
°C/W
Unit
Unit
°C
W
D
V
A
S
2
2
1

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SI1912EDH-T1-E3 Summary of contents

Page 1

... Marking Code Top View Ordering Information: Si1912EDH-T1-E3 (Lead (Pb)-free) Si1912EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Diode-Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si1912EDH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 71408 S10-1054-Rev. B, 03-May- 1.5 2.0 0.9 1.2 1.5 Si1912EDH Vishay Siliconix 2 ° °C 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 140 120 100 C iss 80 60 ...

Page 4

... Si1912EDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0 0.2 0.4 0 Source-Drain Diode Forward Voltage 0.2 0 100 µ 0.1 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com ° ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71408. Document Number: 71408 S10-1054-Rev. B, 03-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1912EDH Vishay Siliconix - www.vishay.com ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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