ZXMC3A17DN8TA Diodes Zetex, ZXMC3A17DN8TA Datasheet

MOSFET N/P-CHAN DUAL 30V 8SOIC

ZXMC3A17DN8TA

Manufacturer Part Number
ZXMC3A17DN8TA
Description
MOSFET N/P-CHAN DUAL 30V 8SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMC3A17DN8TA

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 7.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.1A, 3.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
12.2nC @ 10V
Input Capacitance (ciss) @ Vds
600pF @ 25V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMC3A17DN8TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMC3A17DN8TA
Manufacturer:
ZETEX
Quantity:
20 000
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel : V
P-Channel : V
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 1 - OCTOBER 2005
DEVICE
ZXMC3A17DN8TA
ZXMC3A17DN8TC
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
Motor drive
LCD backlighting
ZXMC
3A17
(BR)DSS
(BR)DSS
REEL SIZE
= -30V : R
= 30V : R
13”
7”
DS(on)
DS(on)
TAPE WIDTH
12mm
12mm
= 0.070 ; I
= 0.050 ; I
1
D
QUANTITY PER REEL
D
= -4.4A
= 5.4A
2500 units
500 units
Q1 = N-channel
ZXMC3A17DN8
S E M I C O N D U C T O R S
Q2 = P-channel
PINOUT
Top View

Related parts for ZXMC3A17DN8TA

ZXMC3A17DN8TA Summary of contents

Page 1

... Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • Motor drive • LCD backlighting ORDERING INFORMATION DEVICE REEL SIZE ZXMC3A17DN8TA 7” ZXMC3A17DN8TC 13” DEVICE MARKING • ZXMC 3A17 ISSUE 1 - OCTOBER 2005 = 0.050 ; I = 5.4A DS(on 0.070 ; I = -4.4A ...

Page 2

ZXMC3A17DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V = 10V; T =25° 10V; T =70° 10V; T =25° (c) Pulsed Drain Current Continuous Source Current ...

Page 3

ADVANCE INFORMATION ISSUE 1 - OCTOBER 2005 ZXMC3A17DN8 CHARACTERISTICS ...

Page 4

ZXMC3A17DN8 N-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance Forward (1) (3) Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) ...

Page 5

ADVANCE INFORMATION P-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER SYMBOL STATIC Drain-Source Breakdown V Voltage Zero Gate Voltage Drain I DSS Current Gate-Body Leakage I GSS Gate-Source Threshold V Voltage Static Drain-Source R (1) On-State Resistance Forward g (1) (3) Transconductance ...

Page 6

ZXMC3A17DN8 N-CHANNEL TYPICAL CHARACTERISTICS ADVANCE INFORMATION ISSUE 1 - OCTOBER 2005 6 ...

Page 7

ADVANCE INFORMATION N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 1 - OCTOBER 2005 ZXMC3A17DN8 ...

Page 8

ZXMC3A17DN8 P-CHANNEL TYPICAL CHARACTERISTICS ADVANCE INFORMATION ISSUE 1 - OCTOBER 2005 8 ...

Page 9

ADVANCE INFORMATION P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 1 - OCTOBER 2005 ZXMC3A17DN8 ...

Page 10

ZXMC3A17DN8 SO8 PACKAGE OUTLINE (Conforms to JEDEC MS-012AA Iss. C) Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 ...

Related keywords