SI4973DY-T1-E3 Vishay, SI4973DY-T1-E3 Datasheet

MOSFET DUAL P-CH 30V 5.8A 8-SOIC

SI4973DY-T1-E3

Manufacturer Part Number
SI4973DY-T1-E3
Description
MOSFET DUAL P-CH 30V 5.8A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4973DY-T1-E3

Transistor Polarity
P-Channel
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
23 mOhm @ 7.6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 10V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.023 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
22 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
5.8 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
7.6A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
29mohm
Rds(on) Test Voltage Vgs
25V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4973DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4973DY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
1 815
Part Number:
SI4973DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 977
Part Number:
SI4973DY-T1-E3
Manufacturer:
VISHAY
Quantity:
8 000
Part Number:
SI4973DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72164
S09-0869-Rev. C, 18-May-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 30
(V)
G
G
S
S
1
1
2
2
1
2
3
4
Si4973DY -T1-E3
Si4973DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
T op V i e w
SO-8
0.023 at V
0.029 at V
R
DS(on)
J
a
= 150 °C)
a
Dual P-Channel 25-V (G-S) MOSFET
GS
GS
8
7
6
5
(Ω)
(Lead (Pb)-free)
= - 10 V
= - 6 V
D
D
D
D
1
1
2
2
a
a
A
= 25 °C, unless otherwise noted
I
Steady State
Steady State
D
- 7.6
- 6.8
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 25 V V
• Compliant to RoHS Directive 2002/95/EC
• Notebook
Symbol
Symbol
T
R
R
Definition
Operation
- Load Switch
- Battery Charger Switch
J
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
G
D
stg
1
P-Channel MOSFET
GS
Provides Extra Head Room for Safe
®
S
D
Power MOSFET
1
1
Typical
10 s
- 7.6
- 6.1
- 1.7
2.0
1.3
45
85
26
- 55 to 150
± 25
- 30
- 30
Steady State
Maximum
G
- 5.8
- 4.6
- 0.9
62.5
110
1.1
0.7
2
35
Vishay Siliconix
P-Channel MOSFET
Si4973DY
www.vishay.com
D
S
2
2
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI4973DY-T1-E3

SI4973DY-T1-E3 Summary of contents

Page 1

... Ordering Information: Si4973DY -T1-E3 (Lead (Pb)-free) Si4973DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4973DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Gate Charge 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72164 S09-0869-Rev. C, 18-May- °C J 0.8 1.0 1.2 1.4 Si4973DY Vishay Siliconix 2500 2000 C iss 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance 1 7 1.4 1.2 1 ...

Page 4

... Si4973DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0.4 0 250 µA D 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on D(on) 1 Limited ° ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72164. Document Number: 72164 S09-0869-Rev. C, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4973DY Vishay Siliconix -1 1 www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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