SI7945DP-T1-E3 Vishay, SI7945DP-T1-E3 Datasheet - Page 3

MOSFET DUAL P-CH 30V 8-SOIC

SI7945DP-T1-E3

Manufacturer Part Number
SI7945DP-T1-E3
Description
MOSFET DUAL P-CH 30V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI7945DP-T1-E3

Transistor Polarity
Dual P-Channel
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 10.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
74nC @ 10V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-10.9A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
31mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7945DP-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7945DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72090
S09-0227-Rev. D, 09-Feb-09
0.05
0.04
0.03
0.02
0.01
0.00
30
10
10
1
8
6
4
2
0
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
0.2
On-Resistance vs. Drain Current
= 10.9 A
10
= 15 V
6
V
SD
Q
- Source-to-Drain Voltage (V)
I
g
0.4
D
- Total Gate Charge (nC)
Gate Charge
T
- Drain Current (A)
12
20
J
= 150 °C
0.6
18
30
0.8
V
V
GS
GS
T
= 4.5 V
J
24
= 10 V
40
= 25 °C
1.0
1.2
30
50
3500
3000
2500
2000
1500
1000
0.05
0.04
0.03
0.02
0.01
0.00
500
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
C
GS
= 10.9 A
rss
= 10 V
6
2
T
V
V
0
J
DS
GS
- Junction T emperature ( °C)
C
oss
- Gate-to-Source V oltage (V)
- Drain-to-Source Voltage (V)
2 5
Capacitance
12
4
I
D
5 0
Vishay Siliconix
= 10.9 A
C
iss
18
6
7 5
Si7945DP
www.vishay.com
100
24
8
125
150
30
10
3

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