ZXMHC6A07T8TA Diodes Zetex, ZXMHC6A07T8TA Datasheet

MOSFET H-BRIDGE N/P-CH 60V SM8

ZXMHC6A07T8TA

Manufacturer Part Number
ZXMHC6A07T8TA
Description
MOSFET H-BRIDGE N/P-CH 60V SM8
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMHC6A07T8TA

Fet Type
2 N and 2 P-Channel (H-Bridge)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 1.8A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1.6A, 1.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
3.2nC @ 10V
Input Capacitance (ciss) @ Vds
166pF @ 40V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
SOT-223 (8 leads), SM8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMHC6A07T8TR
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
ISSUE 2 - MAY 2005
SUMMARY
N-Channel V
P-Channel V
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
DEVICE
ZXMHC6A07T8TA
ZXMHC6A07T8TC
Low On - Resistance
Fast switching speed
Low threshold
Low gate drive
SM8 package
Motor drive
ZXMH
C6A07
(BR)DSS
(BR)DSS
= -60V; R
= 60V; R
REEL
SIZE
13’‘
7
’‘
DS(ON)
DS(ON)
WIDTH
12mm
12mm
TAPE
= 0.300 ; I
= 0.425 ; I
QUANTITY
PER REEL
1000 units
4000 units
D
1
D
= 1.8A
= -1.5A
G
G
D ,
2
1
1
D
2
PINOUT DIAGRAM
S
S
2
ZXMHC6A07T8
1
Top View
SM8
S
S
4
3
D ,
3
D
4
G
G
4
3

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ZXMHC6A07T8TA Summary of contents

Page 1

... Fast switching speed • Low threshold • Low gate drive • SM8 package APPLICATIONS • Motor drive ORDERING INFORMATION DEVICE REEL SIZE ZXMHC6A07T8TA 7 ’‘ ZXMHC6A07T8TC 13’‘ DEVICE MARKING • ZXMH C6A07 ISSUE 2 - MAY 2005 = 0.300 ; 0.425 ; I = -1.5A ...

Page 2

ZXMHC6A07T8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V =10V =10V =10V (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (a)(d) Power Dissipation ...

Page 3

ISSUE 2 - MAY 2005 TYPICAL CHARACTERISTICS 3 ZXMHC6A07T8 ...

Page 4

ZXMHC6A07T8 N-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1)(3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING ...

Page 5

P-CHANNEL ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1)(3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING Turn-On ...

Page 6

ZXMHC6A07T8 N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - MAY 2005 6 ...

Page 7

N-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - MAY 2005 ZXMHC6A07T8 7 ...

Page 8

ZXMHC6A07T8 P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - MAY 2005 8 ...

Page 9

P-CHANNEL TYPICAL CHARACTERISTICS ISSUE 2 - MAY 2005 ZXMHC6A07T8 9 ...

Page 10

ZXMHC6A07T8 PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Typ. Min Max 0.067 A1 0.02 0.1 - 0.008 0.004 0.7 ...

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