SI9934BDY-T1-E3 Vishay, SI9934BDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI9934BDY-T1-E3
• Description: MOSFET DUAL P-CH 12V 4.8A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI9934BDY-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 6.4A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -6.4A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1.4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI9934BDY-T1-E3TR

Si9934BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
- 50
0.01
0.1
2
1
10 -
- 25
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
T
Threshold Voltage
J
- Temperature (°C)
25
10 -
Single Pulse
I
3
D
50
= 150 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
1
100
0.1
10 -
Limited by R
2
Safe Operating Area, Junction-to-Ambient
Limited
* V
I
D(on)
125
Single Pulse
GS
T
A
> minimum V
= 25 °C
Square Wave Pulse Duration (s)
V
150
DS
DS(on)
- Drain-to-Source Voltage (V)
BV
1
10 -
DSS
*
GS
1
Limited
at which R
I
DM
10
DS(on)
Limited
30
25
20
15
10
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
1
5
0
10 -
is specified
3
10 -
100
2
Single Pulse Power
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10 -
P
DM
JM
1
-
Time (s)
T
t
1
A
S09-0704-Rev. D, 27-Apr-09
= P
t
Document Number: 72525
1
2
DM
Z
thJA
100
thJA
t
t
1
2
(t)
10
= 90 °C/W
100
600
600