IRF7314QTRPBF International Rectifier, IRF7314QTRPBF Datasheet - Page 7
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IRF7314QTRPBF
Manufacturer Part Number
IRF7314QTRPBF
Description
MOSFET HEX P-CH DUAL 20V 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF7314QTRPBF
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
58 mOhm @ 5.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.2A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
29nC @ 4.5V
Input Capacitance (ciss) @ Vds
913pF @ 15V
Power - Max
2.4W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Continuous Drain Current Id
-5.2A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
58mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-700mV
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7314QTRPBFCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7314QTRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
0.01
100
0.1
700
600
500
400
300
200
100
10
1
1.0E-05
0
Fig 16. Maximum Avalanche Energy
25
Duty Cycle = Single Pulse
Starting T J , Junction Temperature (°C)
0.05
0.10
0.01
50
Vs. Temperature
1.0E-04
TOP
BOTTOM 10% Duty Cycle
I D = -5.2A
75
Fig 15. Typical Avalanche Current Vs.Pulsewidth
100
Single Pulse
1.0E-03
125
150
1.0E-02
175
tav (sec)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ∆T
Purely a thermal phenomenon and failure occurs at a
not exceeded.
Figures 12a, 12b.
T
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
avalanche pulse.
voltage increase during avalanche).
av
av =
thJC
D (ave)
jmax
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
1.0E-01
= Average power dissipation per single
av
P
) = Transient thermal resistance, see figure 11)
D (ave)
= 1/2 ( 1.3·BV·I
I
Allowed avalanche Current vs
avalanche
assuming ∆ Tj = 25°C due to
avalanche losses
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
1.0E+00
= P
D (ave)
jmax
pulsewidth,
av
av
. This is validated for
·f
) = DT/ Z
·t
th
av
1.0E+01
]
thJC
tav
jmax
1.0E+02
7
is