SI7948DP-T1-GE3 Vishay, SI7948DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7948DP-T1-GE3
• Description: MOSFET N-CH DL 60V PWRPAK 8-SOIC
• Manufacturer: Vishay

Specifications of SI7948DP-T1-GE3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7948DP-T1-GE3TR

Si7948DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.6
0.4
0.2
0.0
0.01
- 50
0 .1
2
1
10
- 4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
T
Threshold Voltage
J
- Temperature (°C)
25
10
- 3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
0.01
100
0.1
10
100
10
1
0.1
- 2
* V
Limited by
R
DS(on)
Safe Operating Area, Junction-to-Case
Limited
125
DS
I
D(on)
> minimum V
New Product
Square Wave Pulse Duration (s)
*
V
150
DS
I
DM
Single Pulse
- Drain-to-Source Voltage (V)
T
Limited
A
10
= 25 °C
1
- 1
GS
at which R
BV
DSS
DS(on)
10
Limited
100
80
60
40
20
1
0
is specified
0.001
100
10 µs
0.01
100 µs
1 ms
10 ms
100 ms
1 s
10 s
DC, 100 s
10
Single Pulse Power
Notes:
1 .
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
Duty Cycle, D =
JM
Time (s)
- T
t
1
A
S09-0268-Rev. C, 16-Feb-09
0.1
= P
t
2
Document Number: 72403
DM
Single Pulse
T
Z
A
thJA
thJA
100
= 25 °C
t
t
1
2
(t)
= 60 °C/W
1
600
10