SI7501DN-T1-E3 Vishay, SI7501DN-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI7501DN-T1-E3
• Description: MOSFET N/P-CH 30V PWRPAK 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7501DN-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 7.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.4A, 4.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 5.4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 28mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7501DN-T1-E3TR

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72173
S-81544-Rev. D, 07-Jul-08
0.01
0.01
0.1
0.1
2
1
2
1
10
10
- 4
-4
0.02
Duty Cycle = 0.5
0.05
Duty Cycle = 0.5
0.2
0.1
0.2
0.1
0.02
0.05
Single Pulse
10
Single Pulse
- 3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
- 2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
- 2
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
P
DM
JM
-1
-
T
t
A
1
= P
t
Vishay Siliconix
2
DM
Z
thJA
thJA
100
t
t
Si7501DN
1
2
(t)
= 65 °C/W
www.vishay.com
600
1
5