SI1917EDH-T1-E3 Vishay, SI1917EDH-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1917EDH-T1-E3
• Description: MOSFET P-CH DUAL 12V SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1917EDH-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 370 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 450mV @ 100µA
• Gate Charge (qg) @ Vgs: 2nC @ 4.5V
• Power - Max: 570mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.37 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1 A
• Power Dissipation: 570 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -1.15A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 800mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -450mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1917EDH-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71414
S10-1054-Rev. B, 03-May-10
1.2
0.9
0.6
0.3
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
0.0
0.0
0
0.2
V
I
0.5
D
On-Resistance vs. Drain Current
DS
= - 1 A
= 6 V
V
1
DS
Output Characteristics
0.4
Q
V
g
- Drain-to-Source Voltage (V)
1.0
GS
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
= 1.8 V
0.6
V
V
1.5
GS
GS
2
0.8
= 2.5 V
= 5 V thru 3 V
2.0
1.0
V
3
GS
1.5 V
2.5
= 4.5 V
1.2
2.5 V
2 V
1.4
3.0
4
200
160
120
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
80
40
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
V
I
D
- 25
rss
GS
0.5
= - 1 A
2
= 4.5 V
V
V
DS
GS
T
Transfer Characteristics
0
1.0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
4
25
Capacitance
C
C
oss
1.5
iss
50
6
Vishay Siliconix
T
25 °C
C
2.0
= - 55 °C
Si1917EDH
75
8
2.5
www.vishay.com
100
125 °C
10
3.0
125
3.5
150
12
3