AO4806 Alpha & Omega Semiconductor Inc, AO4806 Datasheet - Page 4

MOSFET DUAL N-CH 20V 9.4A 8-SOIC

AO4806

Manufacturer Part Number
AO4806
Description
MOSFET DUAL N-CH 20V 9.4A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4806

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 mOhm @ 9.4A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
9.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
1810pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1056-2

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AO4806
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
10.0
5
4
3
2
1
0
1.0
0.1
0
0.01
0.1
0.1
10
0.00001
1
R
limited
Figure 9: Maximum Forward Biased Safe
DS(ON)
T
T
J(Max)
A
Figure 7: Gate-Charge Characteristics
=25°C
4
=150°C
D=T
T
R
J,PK
θJA
Operating Area (Note E)
=62.5°C/W
on
=T
V
I
0.0001
D
/T
DS
=9.4A
A
1
+P
=10V
8
DM
V
Q
DS
.Z
g
10ms
θJA
(nC)
0.1s
(Volts)
Single Pulse
1ms
1s
.R
10s
Figure 11: Normalized Maximum Transient Thermal Impedance
θJA
12
0.001
100µs
DC
10µs
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
16
0.01
100
20
Pulse Width (s)
0.1
40
30
20
10
2800
2400
2000
1600
1200
0
0.001
800
400
Figure 10: Single Pulse Power Rating Junction-to-
0
0
C
0.01
1
oss
Figure 8: Capacitance Characteristics
P
D
5
0.1
T
Ambient (Note E)
on
Pulse Width (s)
C
10
T
rss
V
DS
1
(Volts)
10
C
iss
10
100
T
T
J(Max)
A
=25°C
15
=150°C
100
1000
1000
20

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