NTHD4508NT1G ON Semiconductor, NTHD4508NT1G Datasheet
NTHD4508NT1G
Specifications of NTHD4508NT1G
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NTHD4508NT1G Summary of contents
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... − 150 STG T 260 Symbol Max Unit D R 110 C NTHD4508NT1 NTHD4508NT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX (BR)DSS DS( N− ...
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ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain−to−Source On−Resistance Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge ...
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TYPICAL PERFORMANCE CURVES ...
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TYPICAL PERFORMANCE CURVES 400 ISS 300 C RSS 200 100 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 ...
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... Figure 11. Basic *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. The basic pad layout with dimensions is shown in Figure 11. This is sufficient for low power dissipation MOSFET applications, ...
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... DRAIN 2 7. DRAIN 1 8. DRAIN 1 0.05 (0.002) N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14 ...