SI1024X-T1-E3 Vishay, SI1024X-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI1024X-T1-E3
• Description: MOSFET P-CH DUAL 20V SOT563F
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1024X-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 485mA
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.7 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.485 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 600mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 1.25ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 900mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1024X-T1-E3TR

Si1024X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71170.
www.vishay.com
4
- 0.1
- 0.2
- 0.3
0.3
0.2
0.1
0.0
0.01
- 50
0.1
2
1
10
Threshold Voltage Variance vs. Temperature
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
T
J
- Temperature (°C)
10
Single Pulse
25
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
I
D
50
= 0.25 mA
7
6
5
4
3
2
1
0
- 50
75
A
10
= 25 °C, unless otherwise noted)
-2
- 25
100
BV
125
0
GSS
T
Square Wave Pulse Duration (s)
J
- Temperature (°C)
vs. Temperature
10
25
-1
50
75
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
- 50
125
- 25
V
GS
= 4.5 V
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
I
P
GSS
0
DM
T
JM
J
- Temperature (°C)
- T
vs. Temperature
t
A
1
25
= P
t
2
S10-2432-Rev. D, 25-Oct-10
DM
Document Number: 71170
Z
thJA
50
thJA
100
t
t
1
2
(t)
= 500 °C/W
75
6
100
0
0
125