SI1024X-T1-E3 Vishay, SI1024X-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1024X-T1-E3
• Description: MOSFET P-CH DUAL 20V SOT563F
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1024X-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 485mA
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 0.75nC @ 4.5V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.7 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.485 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 600mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 1.25ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 900mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1024X-T1-E3TR

TYPICAL CHARACTERISTICS (T
Document Number: 71170
S11-0854-Rev. E, 02-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1000
100
4.0
3.2
2.4
1.6
0.8
0.0
10
5
4
3
2
1
0
1
0.0
0.0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 250 mA
0.2
On-Resistance vs. Drain Current
T
= 10 V
J
200
= 25 °C
0.2
V
SD
Q
T
0.4
J
g
= 125 °C
-
I
- Total Gate Charge (nC)
D
S
o
- Drain Current (mA)
Gate Charge
400
u
0.6
c r
V
- e
GS
o t
0.4
D -
= 1.8 V
T
J
0.8
a r
600
= - 55 °C
n i
V
o
a t l
A
1.0
This document is subject to change without notice.
g
0.6
= 25 °C, unless otherwise noted)
e
V
V
GS
800
(
GS
) V
= 2.5 V
= 4.5 V
1.2
1000
0.8
1.4
1.60
1.40
1.20
1.00
0.80
0.60
100
80
60
40
20
0
5
4
3
2
1
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
rss
V
f = 1 MHz
GS
- 25
1
= 0 V
4
V
GS
V
C
T
DS
J
C
oss
0
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
iss
- Drain-to-Source Voltage (V)
2
I
D
Capacitance
= 350 mA
I
D
8
25
= 200 mA
3
Vishay Siliconix
V
I
D
GS
50
www.vishay.com/doc?91000
= 600 mA
12
= 4.5 V
4
75
V
I
Si1024X
D
www.vishay.com
GS
= 350 mA
16
= 1.8 V
100
5
125
20
6
3